DMN1008UFDFQ-7 Diodes Incorporated
auf Bestellung 2767 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 4+ | 0.72 EUR |
| 10+ | 0.59 EUR |
| 100+ | 0.40 EUR |
| 1000+ | 0.22 EUR |
| 3000+ | 0.18 EUR |
| 9000+ | 0.16 EUR |
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Technische Details DMN1008UFDFQ-7 Diodes Incorporated
Description: MOSFET BVDSS: 8V~24V U-DFN2020-6, Packaging: Tape & Reel (TR), Package / Case: 6-UDFN Exposed Pad, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 12.2A (Ta), Rds On (Max) @ Id, Vgs: 8mOhm @ 5A, 4.5V, Power Dissipation (Max): 700mW, Vgs(th) (Max) @ Id: 1V @ 250µA, Supplier Device Package: U-DFN2020-6 (Type F), Grade: Automotive, Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V, Vgs (Max): ±8V, Drain to Source Voltage (Vdss): 12 V, Gate Charge (Qg) (Max) @ Vgs: 23.4 nC @ 8 V, Input Capacitance (Ciss) (Max) @ Vds: 995 pF @ 6 V, Qualification: AEC-Q101.
Weitere Produktangebote DMN1008UFDFQ-7
| Foto | Bezeichnung | Hersteller | Beschreibung |
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| DMN1008UFDFQ-7 | Hersteller : Diodes Inc |
 MOSFET BVDSS: 8V24V U-DFN2020-6 T&R 3K |
Produkt ist nicht verfügbar |
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DMN1008UFDFQ-7 | Hersteller : Diodes Incorporated |
Description: MOSFET BVDSS: 8V~24V U-DFN2020-6 Packaging: Tape & Reel (TR) Package / Case: 6-UDFN Exposed Pad Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 12.2A (Ta) Rds On (Max) @ Id, Vgs: 8mOhm @ 5A, 4.5V Power Dissipation (Max): 700mW Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: U-DFN2020-6 (Type F) Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs (Max): ±8V Drain to Source Voltage (Vdss): 12 V Gate Charge (Qg) (Max) @ Vgs: 23.4 nC @ 8 V Input Capacitance (Ciss) (Max) @ Vds: 995 pF @ 6 V Qualification: AEC-Q101 |
Produkt ist nicht verfügbar |