Technische Details DMN1019UVT-13 Diodes Zetex
Description: MOSFET N-CH 12V 10.7A TSOT26, Packaging: Tape & Reel (TR), Package / Case: SOT-23-6 Thin, TSOT-23-6, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 10.7A (Ta), Rds On (Max) @ Id, Vgs: 10mOhm @ 9.7A, 4.5V, Power Dissipation (Max): 1.73W (Ta), Vgs(th) (Max) @ Id: 800mV @ 250µA, Supplier Device Package: TSOT-26, Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4.5V, Vgs (Max): ±8V, Drain to Source Voltage (Vdss): 12 V, Gate Charge (Qg) (Max) @ Vgs: 50.4 nC @ 8 V, Input Capacitance (Ciss) (Max) @ Vds: 2588 pF @ 10 V.
Weitere Produktangebote DMN1019UVT-13 nach Preis ab 0.15 EUR bis 0.17 EUR
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DMN1019UVT-13 | Hersteller : Diodes Incorporated |
 Description: MOSFET N-CH 12V 10.7A TSOT26Packaging: Tape & Reel (TR) Package / Case: SOT-23-6 Thin, TSOT-23-6 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 10.7A (Ta) Rds On (Max) @ Id, Vgs: 10mOhm @ 9.7A, 4.5V Power Dissipation (Max): 1.73W (Ta) Vgs(th) (Max) @ Id: 800mV @ 250µA Supplier Device Package: TSOT-26 Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4.5V Vgs (Max): ±8V Drain to Source Voltage (Vdss): 12 V Gate Charge (Qg) (Max) @ Vgs: 50.4 nC @ 8 V Input Capacitance (Ciss) (Max) @ Vds: 2588 pF @ 10 V |
auf Bestellung 30000 Stücke: Lieferzeit 10-14 Tag (e) |
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DMN1019UVT-13 | Hersteller : Diodes Zetex |
Trans MOSFET N-CH 12V 10.7A 6-Pin TSOT-26 T/R |
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DMN1019UVT-13 | Hersteller : Diodes Incorporated |
MOSFETs 12V Enh Mode FET |
Produkt ist nicht verfügbar |
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DMN1019UVT-13 | Hersteller : DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 12V; 10.1A; Idm: 70A; 1.11W; TSOT26 Mounting: SMD Case: TSOT26 Kind of package: 13 inch reel; tape Gate-source voltage: ±8V Drain-source voltage: 12V Pulsed drain current: 70A Kind of channel: enhancement Polarisation: unipolar Type of transistor: N-MOSFET Gate charge: 50.4nC On-state resistance: 41mΩ Power dissipation: 1.11W Drain current: 10.1A |
Produkt ist nicht verfügbar |