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Technische Details DMN1019UVT-13 Diodes Zetex
Description: MOSFET N-CH 12V 10.7A TSOT26, Packaging: Tape & Reel (TR), Package / Case: SOT-23-6 Thin, TSOT-23-6, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 10.7A (Ta), Rds On (Max) @ Id, Vgs: 10mOhm @ 9.7A, 4.5V, Power Dissipation (Max): 1.73W (Ta), Vgs(th) (Max) @ Id: 800mV @ 250µA, Supplier Device Package: TSOT-26, Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4.5V, Vgs (Max): ±8V, Drain to Source Voltage (Vdss): 12 V, Gate Charge (Qg) (Max) @ Vgs: 50.4 nC @ 8 V, Input Capacitance (Ciss) (Max) @ Vds: 2588 pF @ 10 V.
Weitere Produktangebote DMN1019UVT-13 nach Preis ab 0.18 EUR bis 0.2 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde | ||||||
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DMN1019UVT-13 | Diodes Incorporated |
 Description: MOSFET N-CH 12V 10.7A TSOT26Packaging: Tape & Reel (TR) Package / Case: SOT-23-6 Thin, TSOT-23-6 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 10.7A (Ta) Rds On (Max) @ Id, Vgs: 10mOhm @ 9.7A, 4.5V Power Dissipation (Max): 1.73W (Ta) Vgs(th) (Max) @ Id: 800mV @ 250µA Supplier Device Package: TSOT-26 Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4.5V Vgs (Max): ±8V Drain to Source Voltage (Vdss): 12 V Gate Charge (Qg) (Max) @ Vgs: 50.4 nC @ 8 V Input Capacitance (Ciss) (Max) @ Vds: 2588 pF @ 10 V |
auf Bestellung 30000 Stücke: Lieferzeit 10-14 Tag (e) |
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| DMN1019UVT-13 |
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Hersteller: Diodes Incorporated
Description: MOSFET N-CH 12V 10.7A TSOT26
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10.7A (Ta)
Rds On (Max) @ Id, Vgs: 10mOhm @ 9.7A, 4.5V
Power Dissipation (Max): 1.73W (Ta)
Vgs(th) (Max) @ Id: 800mV @ 250µA
Supplier Device Package: TSOT-26
Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 12 V
Gate Charge (Qg) (Max) @ Vgs: 50.4 nC @ 8 V
Input Capacitance (Ciss) (Max) @ Vds: 2588 pF @ 10 V
Description: MOSFET N-CH 12V 10.7A TSOT26
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10.7A (Ta)
Rds On (Max) @ Id, Vgs: 10mOhm @ 9.7A, 4.5V
Power Dissipation (Max): 1.73W (Ta)
Vgs(th) (Max) @ Id: 800mV @ 250µA
Supplier Device Package: TSOT-26
Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 12 V
Gate Charge (Qg) (Max) @ Vgs: 50.4 nC @ 8 V
Input Capacitance (Ciss) (Max) @ Vds: 2588 pF @ 10 V
auf Bestellung 30000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 10000+ | 0.2 EUR |
| 20000+ | 0.19 EUR |
| 30000+ | 0.18 EUR |