DMN1019UVT-13 Diodes Incorporated
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 12V 10.7A TSOT26
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10.7A (Ta)
Rds On (Max) @ Id, Vgs: 10mOhm @ 9.7A, 4.5V
Power Dissipation (Max): 1.73W (Ta)
Vgs(th) (Max) @ Id: 800mV @ 250µA
Supplier Device Package: TSOT-26
Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 12 V
Gate Charge (Qg) (Max) @ Vgs: 50.4 nC @ 8 V
Input Capacitance (Ciss) (Max) @ Vds: 2588 pF @ 10 V
| Anzahl | Preis |
|---|---|
| 10000+ | 0.17 EUR |
| 20000+ | 0.16 EUR |
| 30000+ | 0.15 EUR |
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Technische Details DMN1019UVT-13 Diodes Incorporated
Description: MOSFET N-CH 12V 10.7A TSOT26, Packaging: Tape & Reel (TR), Package / Case: SOT-23-6 Thin, TSOT-23-6, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 10.7A (Ta), Rds On (Max) @ Id, Vgs: 10mOhm @ 9.7A, 4.5V, Power Dissipation (Max): 1.73W (Ta), Vgs(th) (Max) @ Id: 800mV @ 250µA, Supplier Device Package: TSOT-26, Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4.5V, Vgs (Max): ±8V, Drain to Source Voltage (Vdss): 12 V, Gate Charge (Qg) (Max) @ Vgs: 50.4 nC @ 8 V, Input Capacitance (Ciss) (Max) @ Vds: 2588 pF @ 10 V.
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| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Preis |
|---|---|---|---|---|---|
 |
DMN1019UVT-13 | Diodes Incorporated |
MOSFETs 12V Enh Mode FET |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 2 Stücke Im Einkaufswagen Stück im Wert von UAH |
 |
DMN1019UVT-13 | DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 12V; 10.1A; Idm: 70A; 1.11W; TSOT26 Mounting: SMD Case: TSOT26 Kind of package: 13 inch reel; tape Gate-source voltage: ±8V Drain-source voltage: 12V Pulsed drain current: 70A Kind of channel: enhancement Polarisation: unipolar Type of transistor: N-MOSFET Gate charge: 50.4nC On-state resistance: 41mΩ Power dissipation: 1.11W Drain current: 10.1A |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 10000 Stücke Im Einkaufswagen Stück im Wert von UAH |
| DMN1019UVT-13 |
|
Hersteller: Diodes Incorporated
MOSFETs 12V Enh Mode FET
MOSFETs 12V Enh Mode FET
Produkt ist nicht verfügbar
Mindestbestellmenge: 2 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| DMN1019UVT-13 |
|
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 12V; 10.1A; Idm: 70A; 1.11W; TSOT26
Mounting: SMD
Case: TSOT26
Kind of package: 13 inch reel; tape
Gate-source voltage: ±8V
Drain-source voltage: 12V
Pulsed drain current: 70A
Kind of channel: enhancement
Polarisation: unipolar
Type of transistor: N-MOSFET
Gate charge: 50.4nC
On-state resistance: 41mΩ
Power dissipation: 1.11W
Drain current: 10.1A
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 12V; 10.1A; Idm: 70A; 1.11W; TSOT26
Mounting: SMD
Case: TSOT26
Kind of package: 13 inch reel; tape
Gate-source voltage: ±8V
Drain-source voltage: 12V
Pulsed drain current: 70A
Kind of channel: enhancement
Polarisation: unipolar
Type of transistor: N-MOSFET
Gate charge: 50.4nC
On-state resistance: 41mΩ
Power dissipation: 1.11W
Drain current: 10.1A
Produkt ist nicht verfügbar
Mindestbestellmenge: 10000 Stücke
Im Einkaufswagen
Stück im Wert von UAH