DMN1053UCP4-7 Diodes Incorporated
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 12V 2.7A X3DSN0808-4
Input Capacitance (Ciss) (Max) @ Vds: 908 pF @ 6 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 4.5 V
Drain to Source Voltage (Vdss): 12 V
Vgs (Max): ±8V
Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4.5V
Part Status: Active
Supplier Device Package: X3-DSN0808-4
Vgs(th) (Max) @ Id: 700mV @ 250µA
Power Dissipation (Max): 1.34W
Rds On (Max) @ Id, Vgs: 42mOhm @ 1A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 2.7A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 4-XFBGA, CSPBGA
Packaging: Tape & Reel (TR)
| Anzahl | Privatkunde |
|---|---|
| 3000+ | 0.3 EUR |
| 6000+ | 0.27 EUR |
| 9000+ | 0.25 EUR |
| 15000+ | 0.24 EUR |
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Technische Details DMN1053UCP4-7 Diodes Incorporated
Description: MOSFET N-CH 12V 2.7A X3DSN0808-4, Input Capacitance (Ciss) (Max) @ Vds: 908 pF @ 6 V, Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 4.5 V, Drain to Source Voltage (Vdss): 12 V, Vgs (Max): ±8V, Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4.5V, Part Status: Active, Supplier Device Package: X3-DSN0808-4, Vgs(th) (Max) @ Id: 700mV @ 250µA, Power Dissipation (Max): 1.34W, Rds On (Max) @ Id, Vgs: 42mOhm @ 1A, 4.5V, Current - Continuous Drain (Id) @ 25°C: 2.7A (Ta), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: 4-XFBGA, CSPBGA, Packaging: Tape & Reel (TR).
Weitere Produktangebote DMN1053UCP4-7 nach Preis ab 0.24 EUR bis 1.13 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde | ||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| DMN1053UCP4-7 | Diodes Incorporated |
MOSFET MOSFETBVDSS: 8V-24V |
auf Bestellung 35980 Stücke: Lieferzeit 10-14 Tag (e) |
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| DMN1053UCP4-7 | Diodes Incorporated |
Description: MOSFET N-CH 12V 2.7A X3DSN0808-4 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 4-XFBGA, CSPBGA Packaging: Cut Tape (CT) Input Capacitance (Ciss) (Max) @ Vds: 908 pF @ 6 V Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 4.5 V Drain to Source Voltage (Vdss): 12 V Vgs (Max): ±8V Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4.5V Part Status: Active Supplier Device Package: X3-DSN0808-4 Vgs(th) (Max) @ Id: 700mV @ 250µA Power Dissipation (Max): 1.34W Rds On (Max) @ Id, Vgs: 42mOhm @ 1A, 4.5V Current - Continuous Drain (Id) @ 25°C: 2.7A (Ta) |
auf Bestellung 113990 Stücke: Lieferzeit 10-14 Tag (e) |
|
| DMN1053UCP4-7 |
|
Hersteller: Diodes Incorporated
MOSFET MOSFETBVDSS: 8V-24V
MOSFET MOSFETBVDSS: 8V-24V
auf Bestellung 35980 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 5+ | 0.8 EUR |
| 10+ | 0.69 EUR |
| 100+ | 0.48 EUR |
| 500+ | 0.38 EUR |
| 1000+ | 0.31 EUR |
| 3000+ | 0.24 EUR |
| DMN1053UCP4-7 |
|
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 12V 2.7A X3DSN0808-4
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 4-XFBGA, CSPBGA
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 908 pF @ 6 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 4.5 V
Drain to Source Voltage (Vdss): 12 V
Vgs (Max): ±8V
Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4.5V
Part Status: Active
Supplier Device Package: X3-DSN0808-4
Vgs(th) (Max) @ Id: 700mV @ 250µA
Power Dissipation (Max): 1.34W
Rds On (Max) @ Id, Vgs: 42mOhm @ 1A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 2.7A (Ta)
Description: MOSFET N-CH 12V 2.7A X3DSN0808-4
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 4-XFBGA, CSPBGA
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 908 pF @ 6 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 4.5 V
Drain to Source Voltage (Vdss): 12 V
Vgs (Max): ±8V
Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4.5V
Part Status: Active
Supplier Device Package: X3-DSN0808-4
Vgs(th) (Max) @ Id: 700mV @ 250µA
Power Dissipation (Max): 1.34W
Rds On (Max) @ Id, Vgs: 42mOhm @ 1A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 2.7A (Ta)
auf Bestellung 113990 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 19+ | 1.13 EUR |
| 28+ | 0.75 EUR |
| 100+ | 0.51 EUR |
| 500+ | 0.38 EUR |
| 1000+ | 0.35 EUR |