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DMN10H170SK3Q-13

DMN10H170SK3Q-13 Diodes Incorporated

DMN10H170SK3Q2.pdf Hersteller: Diodes Incorporated
Description: MOSFET N-CH 100V 12A TO252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 140mOhm @ 5A, 10V
Power Dissipation (Max): 42W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TO-252-3
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 9.7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1167 pF @ 25 V
Qualification: AEC-Q101
auf Bestellung 727500 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
2500+0.42 EUR
5000+ 0.4 EUR
12500+ 0.37 EUR
25000+ 0.36 EUR
Mindestbestellmenge: 2500
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Technische Details DMN10H170SK3Q-13 Diodes Incorporated

Description: MOSFET N-CH 100V 12A TO252, Packaging: Tape & Reel (TR), Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 12A (Tc), Rds On (Max) @ Id, Vgs: 140mOhm @ 5A, 10V, Power Dissipation (Max): 42W (Tc), Vgs(th) (Max) @ Id: 3V @ 250µA, Supplier Device Package: TO-252-3, Grade: Automotive, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 100 V, Gate Charge (Qg) (Max) @ Vgs: 9.7 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1167 pF @ 25 V, Qualification: AEC-Q101.

Weitere Produktangebote DMN10H170SK3Q-13 nach Preis ab 0.47 EUR bis 1.09 EUR

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Preis ohne MwSt
DMN10H170SK3Q-13 DMN10H170SK3Q-13 Hersteller : Diodes Incorporated DMN10H170SK3Q2.pdf Description: MOSFET N-CH 100V 12A TO252
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 140mOhm @ 5A, 10V
Power Dissipation (Max): 42W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TO-252-3
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 9.7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1167 pF @ 25 V
Qualification: AEC-Q101
auf Bestellung 732505 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
17+1.09 EUR
19+ 0.95 EUR
100+ 0.66 EUR
500+ 0.55 EUR
1000+ 0.47 EUR
Mindestbestellmenge: 17
DMN10H170SK3Q-13 Hersteller : DIODES INCORPORATED DMN10H170SK3Q2.pdf DMN10H170SK3Q-13 SMD N channel transistors
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DMN10H170SK3Q-13 DMN10H170SK3Q-13 Hersteller : Diodes Incorporated DIOD_S_A0004887548_1-2542529.pdf MOSFET MOSFET BVDSS: 61V 100V
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