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DMN10H700S-13

DMN10H700S-13 Diodes Incorporated

DMN10H700S.pdf Hersteller: Diodes Incorporated
MOSFET MOSFET BVDSS: 61V-100V
auf Bestellung 6816 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
4+0.74 EUR
10+0.56 EUR
100+0.32 EUR
500+0.21 EUR
1000+0.16 EUR
2500+0.14 EUR
5000+0.13 EUR
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Technische Details DMN10H700S-13 Diodes Incorporated

Description: MOSFET N-CH 100V 700MA SOT23, Packaging: Tape & Reel (TR), Package / Case: TO-236-3, SC-59, SOT-23-3, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 700mA (Ta), Rds On (Max) @ Id, Vgs: 700mOhm @ 1.5A, 10V, FET Feature: Standard, Power Dissipation (Max): 400mW (Ta), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: SOT-23-3, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 6V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 100 V, Gate Charge (Qg) (Max) @ Vgs: 4.6 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 235 pF @ 50 V.

Weitere Produktangebote DMN10H700S-13 nach Preis ab 0.13 EUR bis 0.76 EUR

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DMN10H700S-13 DMN10H700S-13 Hersteller : Diodes Incorporated DMN10H700S.pdf Description: MOSFET N-CH 100V 700MA SOT23
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 700mA (Ta)
Rds On (Max) @ Id, Vgs: 700mOhm @ 1.5A, 10V
FET Feature: Standard
Power Dissipation (Max): 400mW (Ta)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: SOT-23-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 4.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 235 pF @ 50 V
auf Bestellung 9976 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
24+0.76 EUR
32+0.56 EUR
100+0.32 EUR
500+0.21 EUR
1000+0.16 EUR
2000+0.14 EUR
5000+0.13 EUR
Mindestbestellmenge: 24
Im Einkaufswagen  Stück im Wert von  UAH
DMN10H700S-13 Hersteller : DIODES INCORPORATED DMN10H700S.pdf DMN10H700S-13 SMD N channel transistors
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
DMN10H700S-13 DMN10H700S-13 Hersteller : Diodes Incorporated DMN10H700S.pdf Description: MOSFET N-CH 100V 700MA SOT23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 700mA (Ta)
Rds On (Max) @ Id, Vgs: 700mOhm @ 1.5A, 10V
FET Feature: Standard
Power Dissipation (Max): 400mW (Ta)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: SOT-23-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 4.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 235 pF @ 50 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH