DMN2004DWKQ-7 Diodes Incorporated
Hersteller: Diodes Incorporated
Description: MOSFET 2N-CH 20V 0.54A SOT363
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -65°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 200mW
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 540mA (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 150pF @ 16V
Rds On (Max) @ Id, Vgs: 550mOhm @ 540mA, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 0.95nC @ 8V
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-363
Grade: Automotive
Qualification: AEC-Q101
Description: MOSFET 2N-CH 20V 0.54A SOT363
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -65°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 200mW
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 540mA (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 150pF @ 16V
Rds On (Max) @ Id, Vgs: 550mOhm @ 540mA, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 0.95nC @ 8V
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-363
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 225000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 3000+ | 0.19 EUR |
| 6000+ | 0.18 EUR |
| 9000+ | 0.16 EUR |
| 75000+ | 0.15 EUR |
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Technische Details DMN2004DWKQ-7 Diodes Incorporated
Description: MOSFET 2N-CH 20V 0.54A SOT363, Packaging: Tape & Reel (TR), Package / Case: 6-TSSOP, SC-88, SOT-363, Mounting Type: Surface Mount, Configuration: 2 N-Channel (Dual), Operating Temperature: -65°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 200mW, Drain to Source Voltage (Vdss): 20V, Current - Continuous Drain (Id) @ 25°C: 540mA (Ta), Input Capacitance (Ciss) (Max) @ Vds: 150pF @ 16V, Rds On (Max) @ Id, Vgs: 550mOhm @ 540mA, 4.5V, Gate Charge (Qg) (Max) @ Vgs: 0.95nC @ 8V, Vgs(th) (Max) @ Id: 1V @ 250µA, Supplier Device Package: SOT-363, Grade: Automotive, Qualification: AEC-Q101.
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Verfügbarkeit |
Preis ohne MwSt |
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DMN2004DWKQ-7 | Hersteller : Diodes Inc |
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DMN2004DWKQ-7 | Hersteller : DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 20V; 390mA; Idm: 1.5A; 200mW; SOT363 Case: SOT363 Mounting: SMD On-state resistance: 0.9Ω Kind of package: reel; tape Power dissipation: 0.2W Gate charge: 0.95nC Kind of channel: enhanced Gate-source voltage: ±8V Pulsed drain current: 1.5A Drain-source voltage: 20V Drain current: 0.39A Type of transistor: N-MOSFET Polarisation: unipolar Anzahl je Verpackung: 1 Stücke |
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DMN2004DWKQ-7 | Hersteller : Diodes Incorporated |
MOSFET MOSFET BVDSS: 8V-24V |
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DMN2004DWKQ-7 | Hersteller : DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 20V; 390mA; Idm: 1.5A; 200mW; SOT363 Case: SOT363 Mounting: SMD On-state resistance: 0.9Ω Kind of package: reel; tape Power dissipation: 0.2W Gate charge: 0.95nC Kind of channel: enhanced Gate-source voltage: ±8V Pulsed drain current: 1.5A Drain-source voltage: 20V Drain current: 0.39A Type of transistor: N-MOSFET Polarisation: unipolar |
Produkt ist nicht verfügbar |