DMN2005LP4K-7 Diodes Incorporated
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 20V 200MA 3DFN
Packaging: Tape & Reel (TR)
Package / Case: 3-XFDFN
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 200mA (Ta)
Rds On (Max) @ Id, Vgs: 1.5Ohm @ 10mA, 4V
Power Dissipation (Max): 400mW (Ta)
Vgs(th) (Max) @ Id: 900mV @ 100µA
Supplier Device Package: X2-DFN1006-3
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 20 V
Input Capacitance (Ciss) (Max) @ Vds: 41 pF @ 3 V
| Anzahl | Privatkunde |
|---|---|
| 3000+ | 0.19 EUR |
| 6000+ | 0.17 EUR |
| 9000+ | 0.15 EUR |
Artikel auf Bestellung
Nicht an unserem Lager — wir beziehen ihn nach Ihrer Bestellung vom Lieferantenlager.
Lieferzeit:
10-14 Tag (e)
Mindestmenge:
3000 Stücke
Produktrezensionen
Produktbewertung abgeben
Technische Details DMN2005LP4K-7 Diodes Incorporated
Description: MOSFET N-CH 20V 200MA 3DFN, Packaging: Tape & Reel (TR), Package / Case: 3-XFDFN, Mounting Type: Surface Mount, Operating Temperature: -65°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 200mA (Ta), Rds On (Max) @ Id, Vgs: 1.5Ohm @ 10mA, 4V, Power Dissipation (Max): 400mW (Ta), Vgs(th) (Max) @ Id: 900mV @ 100µA, Supplier Device Package: X2-DFN1006-3, Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4V, Vgs (Max): ±10V, Drain to Source Voltage (Vdss): 20 V, Input Capacitance (Ciss) (Max) @ Vds: 41 pF @ 3 V.
Weitere Produktangebote DMN2005LP4K-7 nach Preis ab 0.23 EUR bis 1.58 EUR
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DMN2005LP4K-7 | Diodes Incorporated |
Description: MOSFET N-CH 20V 200MA 3DFN Packaging: Cut Tape (CT) Package / Case: 3-XFDFN Mounting Type: Surface Mount Operating Temperature: -65°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 200mA (Ta) Rds On (Max) @ Id, Vgs: 1.5Ohm @ 10mA, 4V Power Dissipation (Max): 400mW (Ta) Vgs(th) (Max) @ Id: 900mV @ 100µA Supplier Device Package: X2-DFN1006-3 Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4V Vgs (Max): ±10V Drain to Source Voltage (Vdss): 20 V Input Capacitance (Ciss) (Max) @ Vds: 41 pF @ 3 V |
auf Bestellung 15772 Stücke: Lieferzeit 10-14 Tag (e) |
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DMN2005LP4K-7 | Diodes Incorporated |
MOSFETs 20V 300mA |
auf Bestellung 157 Stücke: Lieferzeit 10-14 Tag (e) |
|
| DMN2005LP4K-7 |
|
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 20V 200MA 3DFN
Packaging: Cut Tape (CT)
Package / Case: 3-XFDFN
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 200mA (Ta)
Rds On (Max) @ Id, Vgs: 1.5Ohm @ 10mA, 4V
Power Dissipation (Max): 400mW (Ta)
Vgs(th) (Max) @ Id: 900mV @ 100µA
Supplier Device Package: X2-DFN1006-3
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 20 V
Input Capacitance (Ciss) (Max) @ Vds: 41 pF @ 3 V
Description: MOSFET N-CH 20V 200MA 3DFN
Packaging: Cut Tape (CT)
Package / Case: 3-XFDFN
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 200mA (Ta)
Rds On (Max) @ Id, Vgs: 1.5Ohm @ 10mA, 4V
Power Dissipation (Max): 400mW (Ta)
Vgs(th) (Max) @ Id: 900mV @ 100µA
Supplier Device Package: X2-DFN1006-3
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 20 V
Input Capacitance (Ciss) (Max) @ Vds: 41 pF @ 3 V
auf Bestellung 15772 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 25+ | 0.86 EUR |
| 39+ | 0.54 EUR |
| 100+ | 0.35 EUR |
| 500+ | 0.25 EUR |
| 1000+ | 0.23 EUR |
| DMN2005LP4K-7 |
|
Hersteller: Diodes Incorporated
MOSFETs 20V 300mA
MOSFETs 20V 300mA
auf Bestellung 157 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 3+ | 1.58 EUR |
| 10+ | 1.09 EUR |
| 100+ | 0.69 EUR |
| 500+ | 0.43 EUR |
| 1000+ | 0.32 EUR |