DMN2005UFGQ-7 Diodes Incorporated
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 20V 18A PWRDI3333
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Ta), 50A (Tc)
Rds On (Max) @ Id, Vgs: 4.6mOhm @ 13.5A, 4.5V
Power Dissipation (Max): 1.05W (Ta)
Vgs(th) (Max) @ Id: 1.2V @ 250µA
Supplier Device Package: PowerDI3333-8
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 164 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6495 pF @ 10 V
Qualification: AEC-Q101
Description: MOSFET N-CH 20V 18A PWRDI3333
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Ta), 50A (Tc)
Rds On (Max) @ Id, Vgs: 4.6mOhm @ 13.5A, 4.5V
Power Dissipation (Max): 1.05W (Ta)
Vgs(th) (Max) @ Id: 1.2V @ 250µA
Supplier Device Package: PowerDI3333-8
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 164 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6495 pF @ 10 V
Qualification: AEC-Q101
auf Bestellung 8000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl | Preis ohne MwSt |
---|---|
2000+ | 0.63 EUR |
6000+ | 0.6 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details DMN2005UFGQ-7 Diodes Incorporated
Description: MOSFET N-CH 20V 18A PWRDI3333, Packaging: Tape & Reel (TR), Package / Case: 8-PowerVDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 18A (Ta), 50A (Tc), Rds On (Max) @ Id, Vgs: 4.6mOhm @ 13.5A, 4.5V, Power Dissipation (Max): 1.05W (Ta), Vgs(th) (Max) @ Id: 1.2V @ 250µA, Supplier Device Package: PowerDI3333-8, Grade: Automotive, Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V, Vgs (Max): ±12V, Drain to Source Voltage (Vdss): 20 V, Gate Charge (Qg) (Max) @ Vgs: 164 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 6495 pF @ 10 V, Qualification: AEC-Q101.
Weitere Produktangebote DMN2005UFGQ-7 nach Preis ab 0.55 EUR bis 0.55 EUR
Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt | ||||
---|---|---|---|---|---|---|---|---|---|
DMN2005UFGQ-7 | Hersteller : Diodes Zetex | 20V N-CHANNEL ENHANCEMENT MODE MOSFET PowerDI3333-8 Automotive AEC-Q101 |
auf Bestellung 8000 Stücke: Lieferzeit 14-21 Tag (e) |
|
|||||
DMN2005UFGQ-7 | Hersteller : Diodes Incorporated | MOSFET MOSFET BVDSS: 8V-24V |
Produkt ist nicht verfügbar |