Technische Details DMN2005UFGQ-7 Diodes Zetex
Description: MOSFET N-CH 20V 18A PWRDI3333, Qualification: AEC-Q101, Input Capacitance (Ciss) (Max) @ Vds: 6495 pF @ 10 V, Gate Charge (Qg) (Max) @ Vgs: 164 nC @ 10 V, Drain to Source Voltage (Vdss): 20 V, Vgs (Max): ±12V, Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V, Grade: Automotive, Supplier Device Package: PowerDI3333-8, Vgs(th) (Max) @ Id: 1.2V @ 250µA, Power Dissipation (Max): 1.05W (Ta), Rds On (Max) @ Id, Vgs: 4.6mOhm @ 13.5A, 4.5V, Current - Continuous Drain (Id) @ 25°C: 18A (Ta), 50A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: 8-PowerVDFN, Packaging: Tape & Reel (TR).
Weitere Produktangebote DMN2005UFGQ-7 nach Preis ab 0.69 EUR bis 0.77 EUR
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DMN2005UFGQ-7 | Diodes Incorporated |
 Description: MOSFET N-CH 20V 18A PWRDI3333Qualification: AEC-Q101 Input Capacitance (Ciss) (Max) @ Vds: 6495 pF @ 10 V Gate Charge (Qg) (Max) @ Vgs: 164 nC @ 10 V Drain to Source Voltage (Vdss): 20 V Vgs (Max): ±12V Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Grade: Automotive Supplier Device Package: PowerDI3333-8 Vgs(th) (Max) @ Id: 1.2V @ 250µA Power Dissipation (Max): 1.05W (Ta) Rds On (Max) @ Id, Vgs: 4.6mOhm @ 13.5A, 4.5V Current - Continuous Drain (Id) @ 25°C: 18A (Ta), 50A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerVDFN Packaging: Tape & Reel (TR) |
auf Bestellung 6000 Stücke: Lieferzeit 10-14 Tag (e) |
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| DMN2005UFGQ-7 |
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Hersteller: Diodes Incorporated
Description: MOSFET N-CH 20V 18A PWRDI3333
Qualification: AEC-Q101
Input Capacitance (Ciss) (Max) @ Vds: 6495 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 164 nC @ 10 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±12V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Grade: Automotive
Supplier Device Package: PowerDI3333-8
Vgs(th) (Max) @ Id: 1.2V @ 250µA
Power Dissipation (Max): 1.05W (Ta)
Rds On (Max) @ Id, Vgs: 4.6mOhm @ 13.5A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 18A (Ta), 50A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Packaging: Tape & Reel (TR)
Description: MOSFET N-CH 20V 18A PWRDI3333
Qualification: AEC-Q101
Input Capacitance (Ciss) (Max) @ Vds: 6495 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 164 nC @ 10 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±12V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Grade: Automotive
Supplier Device Package: PowerDI3333-8
Vgs(th) (Max) @ Id: 1.2V @ 250µA
Power Dissipation (Max): 1.05W (Ta)
Rds On (Max) @ Id, Vgs: 4.6mOhm @ 13.5A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 18A (Ta), 50A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Packaging: Tape & Reel (TR)
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 2000+ | 0.77 EUR |
| 4000+ | 0.71 EUR |
| 6000+ | 0.69 EUR |