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Technische Details DMN2020UFCL-7 Diodes Zetex
Description: MOSFET N-CH 20V 9A X1-DFN1616-6, Packaging: Tape & Reel (TR), Package / Case: 6-PowerUFDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 9A (Ta), Rds On (Max) @ Id, Vgs: 14mOhm @ 9A, 4.5V, Power Dissipation (Max): 610mW (Ta), Vgs(th) (Max) @ Id: 900mV @ 250µA, Supplier Device Package: X1-DFN1616-6 (Type E), Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V, Vgs (Max): ±10V, Drain to Source Voltage (Vdss): 20 V, Gate Charge (Qg) (Max) @ Vgs: 21.5 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 1788 pF @ 10 V.
Weitere Produktangebote DMN2020UFCL-7 nach Preis ab 0.23 EUR bis 1.2 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde | ||||||||||||||
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DMN2020UFCL-7 | Diodes Incorporated |
 Description: MOSFET N-CH 20V 9A X1-DFN1616-6Packaging: Tape & Reel (TR) Package / Case: 6-PowerUFDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 9A (Ta) Rds On (Max) @ Id, Vgs: 14mOhm @ 9A, 4.5V Power Dissipation (Max): 610mW (Ta) Vgs(th) (Max) @ Id: 900mV @ 250µA Supplier Device Package: X1-DFN1616-6 (Type E) Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs (Max): ±10V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 21.5 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 1788 pF @ 10 V |
auf Bestellung 1146000 Stücke: Lieferzeit 10-14 Tag (e) |
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DMN2020UFCL-7 | Diodes Incorporated |
Description: MOSFET N-CH 20V 9A X1-DFN1616-6 Packaging: Cut Tape (CT) Input Capacitance (Ciss) (Max) @ Vds: 1788 pF @ 10 V Gate Charge (Qg) (Max) @ Vgs: 21.5 nC @ 4.5 V Drain to Source Voltage (Vdss): 20 V Vgs (Max): ±10V Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Supplier Device Package: X1-DFN1616-6 (Type E) Vgs(th) (Max) @ Id: 900mV @ 250µA Power Dissipation (Max): 610mW (Ta) Rds On (Max) @ Id, Vgs: 14mOhm @ 9A, 4.5V Current - Continuous Drain (Id) @ 25°C: 9A (Ta) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-PowerUFDFN |
auf Bestellung 1148299 Stücke: Lieferzeit 10-14 Tag (e) |
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DMN2020UFCL-7 | Diodes Incorporated |
MOSFETs 20V N-Ch Enh FET 0.61W 1788pF 21.5nC |
auf Bestellung 6716 Stücke: Lieferzeit 10-14 Tag (e) |
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| DMN2020UFCL-7 |
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Hersteller: Diodes Incorporated
Description: MOSFET N-CH 20V 9A X1-DFN1616-6
Packaging: Tape & Reel (TR)
Package / Case: 6-PowerUFDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Ta)
Rds On (Max) @ Id, Vgs: 14mOhm @ 9A, 4.5V
Power Dissipation (Max): 610mW (Ta)
Vgs(th) (Max) @ Id: 900mV @ 250µA
Supplier Device Package: X1-DFN1616-6 (Type E)
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 21.5 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1788 pF @ 10 V
Description: MOSFET N-CH 20V 9A X1-DFN1616-6
Packaging: Tape & Reel (TR)
Package / Case: 6-PowerUFDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Ta)
Rds On (Max) @ Id, Vgs: 14mOhm @ 9A, 4.5V
Power Dissipation (Max): 610mW (Ta)
Vgs(th) (Max) @ Id: 900mV @ 250µA
Supplier Device Package: X1-DFN1616-6 (Type E)
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 21.5 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1788 pF @ 10 V
auf Bestellung 1146000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 3000+ | 0.3 EUR |
| 6000+ | 0.27 EUR |
| 9000+ | 0.25 EUR |
| 15000+ | 0.24 EUR |
| 30000+ | 0.23 EUR |
| DMN2020UFCL-7 |
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Hersteller: Diodes Incorporated
Description: MOSFET N-CH 20V 9A X1-DFN1616-6
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 1788 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 21.5 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±10V
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Supplier Device Package: X1-DFN1616-6 (Type E)
Vgs(th) (Max) @ Id: 900mV @ 250µA
Power Dissipation (Max): 610mW (Ta)
Rds On (Max) @ Id, Vgs: 14mOhm @ 9A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 9A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-PowerUFDFN
Description: MOSFET N-CH 20V 9A X1-DFN1616-6
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 1788 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 21.5 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±10V
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Supplier Device Package: X1-DFN1616-6 (Type E)
Vgs(th) (Max) @ Id: 900mV @ 250µA
Power Dissipation (Max): 610mW (Ta)
Rds On (Max) @ Id, Vgs: 14mOhm @ 9A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 9A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-PowerUFDFN
auf Bestellung 1148299 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 19+ | 1.15 EUR |
| 28+ | 0.75 EUR |
| 100+ | 0.51 EUR |
| 500+ | 0.39 EUR |
| 1000+ | 0.35 EUR |
| DMN2020UFCL-7 |
|
Hersteller: Diodes Incorporated
MOSFETs 20V N-Ch Enh FET 0.61W 1788pF 21.5nC
MOSFETs 20V N-Ch Enh FET 0.61W 1788pF 21.5nC
auf Bestellung 6716 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 3+ | 1.2 EUR |
| 10+ | 0.74 EUR |
| 100+ | 0.48 EUR |
| 500+ | 0.36 EUR |
| 1000+ | 0.32 EUR |
| 3000+ | 0.29 EUR |
| 6000+ | 0.24 EUR |