auf Bestellung 45000 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 3000+ | 0.18 EUR |
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Technische Details DMN2020UFCL-7 Diodes Zetex
Description: MOSFET N-CH 20V 9A X1-DFN1616-6, Packaging: Tape & Reel (TR), Package / Case: 6-PowerUFDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 9A (Ta), Rds On (Max) @ Id, Vgs: 14mOhm @ 9A, 4.5V, Power Dissipation (Max): 610mW (Ta), Vgs(th) (Max) @ Id: 900mV @ 250µA, Supplier Device Package: X1-DFN1616-6 (Type E), Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V, Vgs (Max): ±10V, Drain to Source Voltage (Vdss): 20 V, Gate Charge (Qg) (Max) @ Vgs: 21.5 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 1788 pF @ 10 V.
Weitere Produktangebote DMN2020UFCL-7 nach Preis ab 0.19 EUR bis 0.65 EUR
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DMN2020UFCL-7 | Hersteller : Diodes Incorporated |
 Description: MOSFET N-CH 20V 9A X1-DFN1616-6Packaging: Tape & Reel (TR) Package / Case: 6-PowerUFDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 9A (Ta) Rds On (Max) @ Id, Vgs: 14mOhm @ 9A, 4.5V Power Dissipation (Max): 610mW (Ta) Vgs(th) (Max) @ Id: 900mV @ 250µA Supplier Device Package: X1-DFN1616-6 (Type E) Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs (Max): ±10V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 21.5 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 1788 pF @ 10 V |
auf Bestellung 48000 Stücke: Lieferzeit 10-14 Tag (e) |
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DMN2020UFCL-7 | Hersteller : Diodes Incorporated |
Description: MOSFET N-CH 20V 9A X1-DFN1616-6 Packaging: Cut Tape (CT) Package / Case: 6-PowerUFDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 9A (Ta) Rds On (Max) @ Id, Vgs: 14mOhm @ 9A, 4.5V Power Dissipation (Max): 610mW (Ta) Vgs(th) (Max) @ Id: 900mV @ 250µA Supplier Device Package: X1-DFN1616-6 (Type E) Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs (Max): ±10V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 21.5 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 1788 pF @ 10 V |
auf Bestellung 48211 Stücke: Lieferzeit 10-14 Tag (e) |
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DMN2020UFCL-7 | Hersteller : Diodes Incorporated |
MOSFET 20V N-Ch Enh FET 0.61W 1788pF 21.5nC |
auf Bestellung 9246 Stücke: Lieferzeit 10-14 Tag (e) |
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DMN2020UFCL-7 | Hersteller : Diodes Zetex |
Trans MOSFET N-CH 20V 9A 6-Pin X1-DFN EP T/R |
Produkt ist nicht verfügbar |
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DMN2020UFCL-7 | Hersteller : Diodes Zetex |
Trans MOSFET N-CH 20V 9A 6-Pin X1-DFN EP T/R |
Produkt ist nicht verfügbar |
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DMN2020UFCL-7 | Hersteller : Diodes Inc |
Trans MOSFET N-CH 20V 9A 6-Pin X1-DFN EP T/R |
Produkt ist nicht verfügbar |
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| DMN2020UFCL-7 | Hersteller : DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 20V; 7.1A; Idm: 45A; 610mW Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 20V Drain current: 7.1A Pulsed drain current: 45A Power dissipation: 0.61W Case: X1-DFN1616-6 Gate-source voltage: ±10V On-state resistance: 26mΩ Mounting: SMD Gate charge: 21.5nC Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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| DMN2020UFCL-7 | Hersteller : DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 20V; 7.1A; Idm: 45A; 610mW Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 20V Drain current: 7.1A Pulsed drain current: 45A Power dissipation: 0.61W Case: X1-DFN1616-6 Gate-source voltage: ±10V On-state resistance: 26mΩ Mounting: SMD Gate charge: 21.5nC Kind of package: reel; tape Kind of channel: enhanced |
Produkt ist nicht verfügbar |