DMN2022UNS-7 Diodes Incorporated
Hersteller: Diodes Incorporated
Description: MOSFET 2N-CH 20V 10.7A PWRDI3333
Current - Continuous Drain (Id) @ 25°C: 10.7A (Ta)
Drain to Source Voltage (Vdss): 20V
Power - Max: 1.2W
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Dual) Common Drain
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Packaging: Tape & Reel (TR)
Supplier Device Package: PowerDI3333-8 (Type UXB)
Vgs(th) (Max) @ Id: 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 20.3nC @ 4.5V
Rds On (Max) @ Id, Vgs: 10.8mOhm @ 4A, 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 1870pF @ 10V
| Anzahl | Preis |
|---|---|
| 2000+ | 0.37 EUR |
| 6000+ | 0.35 EUR |
| 10000+ | 0.33 EUR |
| 50000+ | 0.32 EUR |
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Technische Details DMN2022UNS-7 Diodes Incorporated
Description: MOSFET 2N-CH 20V 10.7A PWRDI3333, Current - Continuous Drain (Id) @ 25°C: 10.7A (Ta), Drain to Source Voltage (Vdss): 20V, Power - Max: 1.2W, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Configuration: 2 N-Channel (Dual) Common Drain, Mounting Type: Surface Mount, Package / Case: 8-PowerVDFN, Packaging: Tape & Reel (TR), Supplier Device Package: PowerDI3333-8 (Type UXB), Vgs(th) (Max) @ Id: 1V @ 250µA, Gate Charge (Qg) (Max) @ Vgs: 20.3nC @ 4.5V, Rds On (Max) @ Id, Vgs: 10.8mOhm @ 4A, 4.5V, Input Capacitance (Ciss) (Max) @ Vds: 1870pF @ 10V.
Weitere Produktangebote DMN2022UNS-7 nach Preis ab 0.42 EUR bis 0.99 EUR
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DMN2022UNS-7 | Diodes Incorporated |
Description: MOSFET 2N-CH 20V 10.7A PWRDI3333 Supplier Device Package: PowerDI3333-8 (Type UXB) Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 20.3nC @ 4.5V Rds On (Max) @ Id, Vgs: 10.8mOhm @ 4A, 4.5V Input Capacitance (Ciss) (Max) @ Vds: 1870pF @ 10V Current - Continuous Drain (Id) @ 25°C: 10.7A (Ta) Drain to Source Voltage (Vdss): 20V Power - Max: 1.2W Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Configuration: 2 N-Channel (Dual) Common Drain Mounting Type: Surface Mount Package / Case: 8-PowerVDFN Packaging: Cut Tape (CT) |
auf Bestellung 84000 Stücke: Lieferzeit 10-14 Tag (e) |
|
| DMN2022UNS-7 |
|
Hersteller: Diodes Incorporated
Description: MOSFET 2N-CH 20V 10.7A PWRDI3333
Supplier Device Package: PowerDI3333-8 (Type UXB)
Vgs(th) (Max) @ Id: 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 20.3nC @ 4.5V
Rds On (Max) @ Id, Vgs: 10.8mOhm @ 4A, 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 1870pF @ 10V
Current - Continuous Drain (Id) @ 25°C: 10.7A (Ta)
Drain to Source Voltage (Vdss): 20V
Power - Max: 1.2W
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Dual) Common Drain
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Packaging: Cut Tape (CT)
Description: MOSFET 2N-CH 20V 10.7A PWRDI3333
Supplier Device Package: PowerDI3333-8 (Type UXB)
Vgs(th) (Max) @ Id: 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 20.3nC @ 4.5V
Rds On (Max) @ Id, Vgs: 10.8mOhm @ 4A, 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 1870pF @ 10V
Current - Continuous Drain (Id) @ 25°C: 10.7A (Ta)
Drain to Source Voltage (Vdss): 20V
Power - Max: 1.2W
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Dual) Common Drain
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Packaging: Cut Tape (CT)
auf Bestellung 84000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 18+ | 0.99 EUR |
| 21+ | 0.85 EUR |
| 100+ | 0.59 EUR |
| 500+ | 0.49 EUR |
| 1000+ | 0.42 EUR |