| Anzahl | Privatkunde |
|---|---|
| 2000+ | 0.35 EUR |
Artikel auf Bestellung
Nicht an unserem Lager — wir beziehen ihn nach Ihrer Bestellung vom Lieferantenlager.
Lieferzeit:
14-21 Tag (e)
Mindestmenge:
2000 Stücke
Produktrezensionen
Produktbewertung abgeben
Technische Details DMN2022UNS-7 Diodes Zetex
Description: MOSFET 2N-CH 20V 10.7A PWRDI3333, Packaging: Tape & Reel (TR), Package / Case: 8-PowerVDFN, Mounting Type: Surface Mount, Configuration: 2 N-Channel (Dual) Common Drain, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 1.2W, Drain to Source Voltage (Vdss): 20V, Current - Continuous Drain (Id) @ 25°C: 10.7A (Ta), Input Capacitance (Ciss) (Max) @ Vds: 1870pF @ 10V, Rds On (Max) @ Id, Vgs: 10.8mOhm @ 4A, 4.5V, Gate Charge (Qg) (Max) @ Vgs: 20.3nC @ 4.5V, Vgs(th) (Max) @ Id: 1V @ 250µA, Supplier Device Package: PowerDI3333-8 (Type UXB).
Weitere Produktangebote DMN2022UNS-7 nach Preis ab 0.38 EUR bis 1.18 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde | ||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 |
DMN2022UNS-7 | Diodes Incorporated |
 Description: MOSFET 2N-CH 20V 10.7A PWRDI3333Packaging: Tape & Reel (TR) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Common Drain Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 1.2W Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 10.7A (Ta) Input Capacitance (Ciss) (Max) @ Vds: 1870pF @ 10V Rds On (Max) @ Id, Vgs: 10.8mOhm @ 4A, 4.5V Gate Charge (Qg) (Max) @ Vgs: 20.3nC @ 4.5V Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: PowerDI3333-8 (Type UXB) |
auf Bestellung 84000 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||
|
|
DMN2022UNS-7 | Diodes Incorporated |
Description: MOSFET 2N-CH 20V 10.7A PWRDI3333 Packaging: Cut Tape (CT) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Common Drain Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 1.2W Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 10.7A (Ta) Input Capacitance (Ciss) (Max) @ Vds: 1870pF @ 10V Rds On (Max) @ Id, Vgs: 10.8mOhm @ 4A, 4.5V Gate Charge (Qg) (Max) @ Vgs: 20.3nC @ 4.5V Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: PowerDI3333-8 (Type UXB) |
auf Bestellung 84000 Stücke: Lieferzeit 10-14 Tag (e) |
|
| DMN2022UNS-7 |
|
Hersteller: Diodes Incorporated
Description: MOSFET 2N-CH 20V 10.7A PWRDI3333
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual) Common Drain
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.2W
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 10.7A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 1870pF @ 10V
Rds On (Max) @ Id, Vgs: 10.8mOhm @ 4A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 20.3nC @ 4.5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: PowerDI3333-8 (Type UXB)
Description: MOSFET 2N-CH 20V 10.7A PWRDI3333
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual) Common Drain
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.2W
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 10.7A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 1870pF @ 10V
Rds On (Max) @ Id, Vgs: 10.8mOhm @ 4A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 20.3nC @ 4.5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: PowerDI3333-8 (Type UXB)
auf Bestellung 84000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 2000+ | 0.44 EUR |
| 6000+ | 0.42 EUR |
| 10000+ | 0.39 EUR |
| 50000+ | 0.38 EUR |
| DMN2022UNS-7 |
|
Hersteller: Diodes Incorporated
Description: MOSFET 2N-CH 20V 10.7A PWRDI3333
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual) Common Drain
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.2W
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 10.7A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 1870pF @ 10V
Rds On (Max) @ Id, Vgs: 10.8mOhm @ 4A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 20.3nC @ 4.5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: PowerDI3333-8 (Type UXB)
Description: MOSFET 2N-CH 20V 10.7A PWRDI3333
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual) Common Drain
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.2W
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 10.7A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 1870pF @ 10V
Rds On (Max) @ Id, Vgs: 10.8mOhm @ 4A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 20.3nC @ 4.5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: PowerDI3333-8 (Type UXB)
auf Bestellung 84000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 18+ | 1.18 EUR |
| 21+ | 1.01 EUR |
| 100+ | 0.7 EUR |
| 500+ | 0.58 EUR |
| 1000+ | 0.5 EUR |