DMN2028UVT-13 Diodes Incorporated
Hersteller: Diodes IncorporatedDescription: MOSFET N-CH 20V 6.2A TSOT-26
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6.2A (Ta)
Rds On (Max) @ Id, Vgs: 24mOhm @ 6.2A, 4.5V
Power Dissipation (Max): 1.2W (Ta)
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: TSOT-23-6
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 8.3 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 856 pF @ 10 V
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Technische Details DMN2028UVT-13 Diodes Incorporated
Description: MOSFET N-CH 20V 6.2A TSOT-26, Packaging: Tape & Reel (TR), Package / Case: SOT-23-6 Thin, TSOT-23-6, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 6.2A (Ta), Rds On (Max) @ Id, Vgs: 24mOhm @ 6.2A, 4.5V, Power Dissipation (Max): 1.2W (Ta), Vgs(th) (Max) @ Id: 1.5V @ 250µA, Supplier Device Package: TSOT-23-6, Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V, Vgs (Max): ±8V, Drain to Source Voltage (Vdss): 20 V, Gate Charge (Qg) (Max) @ Vgs: 8.3 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 856 pF @ 10 V.
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DMN2028UVT-13 | Hersteller : Diodes Incorporated |
MOSFET N-Ch Enh Mode FET 20Vdss 8Vgss 40A |
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