DMN2041UVT-7 Diodes Incorporated
Hersteller: Diodes Incorporated
Description: MOSFET 2N-CH 20V 5.8A TSOT26
Power - Max: 1.1W
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: SOT-23-6 Thin, TSOT-23-6
Packaging: Tape & Reel (TR)
Part Status: Active
Supplier Device Package: TSOT-26
Vgs(th) (Max) @ Id: 900mV @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 9.1nC @ 4.5V
Rds On (Max) @ Id, Vgs: 28mOhm @ 8.2A, 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 689pF @ 10V
Current - Continuous Drain (Id) @ 25°C: 5.8A (Ta)
Drain to Source Voltage (Vdss): 20V
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Technische Details DMN2041UVT-7 Diodes Incorporated
Description: MOSFET 2N-CH 20V 5.8A TSOT26, Power - Max: 1.1W, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Configuration: 2 N-Channel (Dual), Mounting Type: Surface Mount, Package / Case: SOT-23-6 Thin, TSOT-23-6, Packaging: Tape & Reel (TR), Part Status: Active, Supplier Device Package: TSOT-26, Vgs(th) (Max) @ Id: 900mV @ 250µA, Gate Charge (Qg) (Max) @ Vgs: 9.1nC @ 4.5V, Rds On (Max) @ Id, Vgs: 28mOhm @ 8.2A, 4.5V, Input Capacitance (Ciss) (Max) @ Vds: 689pF @ 10V, Current - Continuous Drain (Id) @ 25°C: 5.8A (Ta), Drain to Source Voltage (Vdss): 20V.
Weitere Produktangebote DMN2041UVT-7 nach Preis ab 0.18 EUR bis 0.93 EUR
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DMN2041UVT-7 | Diodes Incorporated |
MOSFETs MOSFET BVDSS: 8V-24V TSOT26 T&R 3K |
auf Bestellung 7908 Stücke: Lieferzeit 10-14 Tag (e) |
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DMN2041UVT-7 | Diodes Incorporated |
Description: MOSFET 2N-CH 20V 5.8A TSOT26 Part Status: Active Supplier Device Package: TSOT-26 Vgs(th) (Max) @ Id: 900mV @ 250µA Gate Charge (Qg) (Max) @ Vgs: 9.1nC @ 4.5V Rds On (Max) @ Id, Vgs: 28mOhm @ 8.2A, 4.5V Input Capacitance (Ciss) (Max) @ Vds: 689pF @ 10V Current - Continuous Drain (Id) @ 25°C: 5.8A (Ta) Drain to Source Voltage (Vdss): 20V Power - Max: 1.1W Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Configuration: 2 N-Channel (Dual) Mounting Type: Surface Mount Package / Case: SOT-23-6 Thin, TSOT-23-6 Packaging: Cut Tape (CT) |
auf Bestellung 7468 Stücke: Lieferzeit 10-14 Tag (e) |
|
| DMN2041UVT-7 |
|
Hersteller: Diodes Incorporated
MOSFETs MOSFET BVDSS: 8V-24V TSOT26 T&R 3K
MOSFETs MOSFET BVDSS: 8V-24V TSOT26 T&R 3K
auf Bestellung 7908 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 4+ | 0.91 EUR |
| 10+ | 0.55 EUR |
| 100+ | 0.36 EUR |
| 500+ | 0.28 EUR |
| 1000+ | 0.24 EUR |
| 3000+ | 0.2 EUR |
| 6000+ | 0.18 EUR |
| DMN2041UVT-7 |
|
Hersteller: Diodes Incorporated
Description: MOSFET 2N-CH 20V 5.8A TSOT26
Part Status: Active
Supplier Device Package: TSOT-26
Vgs(th) (Max) @ Id: 900mV @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 9.1nC @ 4.5V
Rds On (Max) @ Id, Vgs: 28mOhm @ 8.2A, 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 689pF @ 10V
Current - Continuous Drain (Id) @ 25°C: 5.8A (Ta)
Drain to Source Voltage (Vdss): 20V
Power - Max: 1.1W
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: SOT-23-6 Thin, TSOT-23-6
Packaging: Cut Tape (CT)
Description: MOSFET 2N-CH 20V 5.8A TSOT26
Part Status: Active
Supplier Device Package: TSOT-26
Vgs(th) (Max) @ Id: 900mV @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 9.1nC @ 4.5V
Rds On (Max) @ Id, Vgs: 28mOhm @ 8.2A, 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 689pF @ 10V
Current - Continuous Drain (Id) @ 25°C: 5.8A (Ta)
Drain to Source Voltage (Vdss): 20V
Power - Max: 1.1W
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: SOT-23-6 Thin, TSOT-23-6
Packaging: Cut Tape (CT)
auf Bestellung 7468 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 19+ | 0.93 EUR |
| 31+ | 0.57 EUR |
| 100+ | 0.36 EUR |
| 500+ | 0.28 EUR |
| 1000+ | 0.25 EUR |