DMN2050LQ-7 Diodes Zetex
auf Bestellung 33000 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 3000+ | 0.2 EUR |
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Technische Details DMN2050LQ-7 Diodes Zetex
Description: MOSFET N-CH 20V 5.9A SOT23, Packaging: Tape & Reel (TR), Package / Case: TO-236-3, SC-59, SOT-23-3, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 5.9A (Ta), Rds On (Max) @ Id, Vgs: 29mOhm @ 5A, 4.5V, Power Dissipation (Max): 1.4W, Vgs(th) (Max) @ Id: 1.4V @ 250µA, Supplier Device Package: SOT-23-3, Grade: Automotive, Drive Voltage (Max Rds On, Min Rds On): 2V, 4.5V, Vgs (Max): ±12V, Drain to Source Voltage (Vdss): 20 V, Gate Charge (Qg) (Max) @ Vgs: 6.7 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 532 pF @ 10 V, Qualification: AEC-Q101.
Weitere Produktangebote DMN2050LQ-7 nach Preis ab 0.21 EUR bis 1.18 EUR
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DMN2050LQ-7 | Hersteller : Diodes Incorporated |
 Description: MOSFET N-CH 20V 5.9A SOT23Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 5.9A (Ta) Rds On (Max) @ Id, Vgs: 29mOhm @ 5A, 4.5V Power Dissipation (Max): 1.4W Vgs(th) (Max) @ Id: 1.4V @ 250µA Supplier Device Package: SOT-23-3 Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 2V, 4.5V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 6.7 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 532 pF @ 10 V Qualification: AEC-Q101 |
auf Bestellung 27000 Stücke: Lieferzeit 10-14 Tag (e) |
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DMN2050LQ-7 | Hersteller : Diodes Incorporated |
MOSFETs MOSFET BVDSS: 8V-24V SOT23 T&R 3K |
auf Bestellung 2551 Stücke: Lieferzeit 10-14 Tag (e) |
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DMN2050LQ-7 | Hersteller : Diodes Incorporated |
Description: MOSFET N-CH 20V 5.9A SOT23 Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 5.9A (Ta) Rds On (Max) @ Id, Vgs: 29mOhm @ 5A, 4.5V Power Dissipation (Max): 1.4W Vgs(th) (Max) @ Id: 1.4V @ 250µA Supplier Device Package: SOT-23-3 Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 2V, 4.5V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 6.7 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 532 pF @ 10 V Qualification: AEC-Q101 |
auf Bestellung 27000 Stücke: Lieferzeit 10-14 Tag (e) |
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| DMN2050LQ-7 | Hersteller : DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; automotive industry Type of transistor: N-MOSFET Polarisation: unipolar Mounting: SMD Application: automotive industry |
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