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Technische Details DMN2056U-13 Diodes Zetex
Description: MOSFET N-CHANNEL 20V 4A SOT23-3, Packaging: Tape & Reel (TR), Package / Case: TO-236-3, SC-59, SOT-23-3, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 4A (Ta), Rds On (Max) @ Id, Vgs: 38mOhm @ 3.6A, 4.5V, Power Dissipation (Max): 940mW, Vgs(th) (Max) @ Id: 1V @ 250µA, Supplier Device Package: SOT-23-3, Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V, Vgs (Max): ±8V, Drain to Source Voltage (Vdss): 20 V, Gate Charge (Qg) (Max) @ Vgs: 4.3 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 339 pF @ 10 V.
Weitere Produktangebote DMN2056U-13 nach Preis ab 0.1 EUR bis 0.65 EUR
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DMN2056U-13 | Diodes Incorporated |
 Description: MOSFET N-CHANNEL 20V 4A SOT23-3Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 4A (Ta) Rds On (Max) @ Id, Vgs: 38mOhm @ 3.6A, 4.5V Power Dissipation (Max): 940mW Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: SOT-23-3 Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V Vgs (Max): ±8V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 4.3 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 339 pF @ 10 V |
auf Bestellung 20000 Stücke: Lieferzeit 10-14 Tag (e) |
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DMN2056U-13 | Diodes Incorporated |
MOSFETs MOSFET BVDSS: 8V-24V |
auf Bestellung 1394 Stücke: Lieferzeit 10-14 Tag (e) |
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| DMN2056U-13 |
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Hersteller: Diodes Incorporated
Description: MOSFET N-CHANNEL 20V 4A SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Ta)
Rds On (Max) @ Id, Vgs: 38mOhm @ 3.6A, 4.5V
Power Dissipation (Max): 940mW
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-23-3
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 4.3 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 339 pF @ 10 V
Description: MOSFET N-CHANNEL 20V 4A SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Ta)
Rds On (Max) @ Id, Vgs: 38mOhm @ 3.6A, 4.5V
Power Dissipation (Max): 940mW
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-23-3
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 4.3 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 339 pF @ 10 V
auf Bestellung 20000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 10000+ | 0.15 EUR |
| 20000+ | 0.13 EUR |
| DMN2056U-13 |
|
Hersteller: Diodes Incorporated
MOSFETs MOSFET BVDSS: 8V-24V
MOSFETs MOSFET BVDSS: 8V-24V
auf Bestellung 1394 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 6+ | 0.65 EUR |
| 10+ | 0.39 EUR |
| 100+ | 0.25 EUR |
| 500+ | 0.19 EUR |
| 1000+ | 0.14 EUR |
| 5000+ | 0.13 EUR |
| 10000+ | 0.1 EUR |