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Technische Details DMN2056U-7 Diodes Zetex
Description: DIODES INC. - DMN2056U-7 - Leistungs-MOSFET, n-Kanal, 20 V, 4 A, 0.038 ohm, SOT-23, Oberflächenmontage, tariffCode: 85412100, Transistormontage: Oberflächenmontage, euEccn: NLR, Drain-Source-Spannung Vds: 20V, rohsCompliant: YES, Dauer-Drainstrom Id: 4A, hazardous: false, rohsPhthalatesCompliant: YES, Qualifikation: -, isCanonical: Y, MSL: MSL 1 - unbegrenzt, Gate-Source-Schwellenspannung, max.: 600mV, Verlustleistung: 660mW, SVHC: No SVHC (25-Jun-2025), Bauform - Transistor: SOT-23, Anzahl der Pins: 3Pin(s), Produktpalette: -, productTraceability: Yes-Date/Lot Code, usEccn: EAR99, Kanaltyp: n-Kanal, Betriebstemperatur, max.: 150°C, Rds(on)-Prüfspannung: 4.5V, Drain-Source-Durchgangswiderstand: 0.038ohm.
Weitere Produktangebote DMN2056U-7 nach Preis ab 0.11 EUR bis 0.74 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde | ||||||||||||
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DMN2056U-7 | Diodes Incorporated |
 Description: MOSFET N-CHANNEL 20V 4A SOT23-3Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 4A (Ta) Rds On (Max) @ Id, Vgs: 38mOhm @ 3.6A, 4.5V Power Dissipation (Max): 940mW Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: SOT-23-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V Vgs (Max): ±8V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 4.3 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 339 pF @ 10 V |
auf Bestellung 117000 Stücke: Lieferzeit 10-14 Tag (e) |
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DMN2056U-7 | Diodes Zetex |
Trans MOSFET N-CH 20V 4A 3-Pin SOT-23 T/R |
auf Bestellung 657000 Stücke: Lieferzeit 14-21 Tag (e) |
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DMN2056U-7 | DIODES/ZETEX |
Transistor N-MOSFET; 20V; 8V; 38mOhm; 4A; 660mW; -55°C~150°C; Substitute: DMN2056U-13; DMN2056U-7 TDMN2056U-7 Diodes Anzahl je Verpackung: 100 Stücke |
auf Bestellung 3000 Stücke: Lieferzeit 7-14 Tag (e) |
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DMN2056U-7 | DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 20V; 3.7A; 0.94W; SOT23 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 20V Drain current: 3.7A Power dissipation: 0.94W Case: SOT23 Gate-source voltage: ±8V On-state resistance: 45mΩ Mounting: SMD Kind of package: 7 inch reel; tape Kind of channel: enhancement |
auf Bestellung 1528 Stücke: Lieferzeit 14-21 Tag (e) |
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DMN2056U-7 | Diodes Incorporated |
Description: MOSFET N-CHANNEL 20V 4A SOT23-3 Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 4A (Ta) Rds On (Max) @ Id, Vgs: 38mOhm @ 3.6A, 4.5V Power Dissipation (Max): 940mW Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: SOT-23-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V Vgs (Max): ±8V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 4.3 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 339 pF @ 10 V |
auf Bestellung 118608 Stücke: Lieferzeit 10-14 Tag (e) |
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DMN2056U-7 | Diodes Incorporated |
MOSFETs MOSFET N-CHANNEL 20V 4A SOT23-3 |
auf Bestellung 148086 Stücke: Lieferzeit 10-14 Tag (e) |
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DMN2056U-7 | Diodes Zetex |
Trans MOSFET N-CH 20V 4A 3-Pin SOT-23 T/R |
auf Bestellung 55 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
| DMN2056U-7 | Diodes INC. |
N-канальний ПТ, Udss, В = 20, Id = 4 А, Ciss, пФ @ Uds, В = 339 @ 10, Qg, нКл = 4,3 @ 4,5 В, Rds = 38 мОм @ 3,6 A, 4,5 В, Ugs(th) = 1 В @ 250 мкА, Р, Вт = 0,94, Тексп, °C = -55...+150, Тип монт. = smd,... Транзистори Корпус: SOT-23-3 Од. вим: шт Anzahl je Verpackung: 3000 Stücke |
verfügbar 1479 Stücke: |
Im Einkaufswagen Stück im Wert von UAH |
| DMN2056U-7 |
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Hersteller: Diodes Incorporated
Description: MOSFET N-CHANNEL 20V 4A SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Ta)
Rds On (Max) @ Id, Vgs: 38mOhm @ 3.6A, 4.5V
Power Dissipation (Max): 940mW
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-23-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 4.3 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 339 pF @ 10 V
Description: MOSFET N-CHANNEL 20V 4A SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Ta)
Rds On (Max) @ Id, Vgs: 38mOhm @ 3.6A, 4.5V
Power Dissipation (Max): 940mW
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-23-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 4.3 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 339 pF @ 10 V
auf Bestellung 117000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 3000+ | 0.15 EUR |
| 9000+ | 0.13 EUR |
| DMN2056U-7 |
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Hersteller: Diodes Zetex
Trans MOSFET N-CH 20V 4A 3-Pin SOT-23 T/R
Trans MOSFET N-CH 20V 4A 3-Pin SOT-23 T/R
auf Bestellung 657000 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 3000+ | 0.15 EUR |
| 6000+ | 0.13 EUR |
| DMN2056U-7 |
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Hersteller: DIODES/ZETEX
Transistor N-MOSFET; 20V; 8V; 38mOhm; 4A; 660mW; -55°C~150°C; Substitute: DMN2056U-13; DMN2056U-7 TDMN2056U-7 Diodes
Anzahl je Verpackung: 100 Stücke
Transistor N-MOSFET; 20V; 8V; 38mOhm; 4A; 660mW; -55°C~150°C; Substitute: DMN2056U-13; DMN2056U-7 TDMN2056U-7 Diodes
Anzahl je Verpackung: 100 Stücke
auf Bestellung 3000 Stücke:
Lieferzeit 7-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 200+ | 0.3 EUR |
| DMN2056U-7 |
|
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 3.7A; 0.94W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 3.7A
Power dissipation: 0.94W
Case: SOT23
Gate-source voltage: ±8V
On-state resistance: 45mΩ
Mounting: SMD
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 3.7A; 0.94W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 3.7A
Power dissipation: 0.94W
Case: SOT23
Gate-source voltage: ±8V
On-state resistance: 45mΩ
Mounting: SMD
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
auf Bestellung 1528 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 278+ | 0.31 EUR |
| 363+ | 0.24 EUR |
| 499+ | 0.17 EUR |
| 564+ | 0.15 EUR |
| 722+ | 0.12 EUR |
| 1000+ | 0.11 EUR |
| DMN2056U-7 |
|
Hersteller: Diodes Incorporated
Description: MOSFET N-CHANNEL 20V 4A SOT23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Ta)
Rds On (Max) @ Id, Vgs: 38mOhm @ 3.6A, 4.5V
Power Dissipation (Max): 940mW
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-23-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 4.3 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 339 pF @ 10 V
Description: MOSFET N-CHANNEL 20V 4A SOT23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Ta)
Rds On (Max) @ Id, Vgs: 38mOhm @ 3.6A, 4.5V
Power Dissipation (Max): 940mW
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-23-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 4.3 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 339 pF @ 10 V
auf Bestellung 118608 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 30+ | 0.71 EUR |
| 49+ | 0.44 EUR |
| 59+ | 0.36 EUR |
| 67+ | 0.31 EUR |
| 100+ | 0.27 EUR |
| DMN2056U-7 |
|
Hersteller: Diodes Incorporated
MOSFETs MOSFET N-CHANNEL 20V 4A SOT23-3
MOSFETs MOSFET N-CHANNEL 20V 4A SOT23-3
auf Bestellung 148086 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 5+ | 0.74 EUR |
| 10+ | 0.44 EUR |
| 100+ | 0.27 EUR |
| 500+ | 0.2 EUR |
| 1000+ | 0.18 EUR |
| 3000+ | 0.14 EUR |
| DMN2056U-7 |
|
Hersteller: Diodes Zetex
Trans MOSFET N-CH 20V 4A 3-Pin SOT-23 T/R
Trans MOSFET N-CH 20V 4A 3-Pin SOT-23 T/R
auf Bestellung 55 Stücke:
Lieferzeit 14-21 Tag (e)
| DMN2056U-7 |
|
Hersteller: Diodes INC.
N-канальний ПТ, Udss, В = 20, Id = 4 А, Ciss, пФ @ Uds, В = 339 @ 10, Qg, нКл = 4,3 @ 4,5 В, Rds = 38 мОм @ 3,6 A, 4,5 В, Ugs(th) = 1 В @ 250 мкА, Р, Вт = 0,94, Тексп, °C = -55...+150, Тип монт. = smd,... Транзистори Корпус: SOT-23-3 Од. вим: шт
Anzahl je Verpackung: 3000 Stücke
N-канальний ПТ, Udss, В = 20, Id = 4 А, Ciss, пФ @ Uds, В = 339 @ 10, Qg, нКл = 4,3 @ 4,5 В, Rds = 38 мОм @ 3,6 A, 4,5 В, Ugs(th) = 1 В @ 250 мкА, Р, Вт = 0,94, Тексп, °C = -55...+150, Тип монт. = smd,... Транзистори Корпус: SOT-23-3 Од. вим: шт
Anzahl je Verpackung: 3000 Stücke
verfügbar 1479 Stücke: