DMN2065UW-7 Diodes Incorporated


DMN2065UW.pdf
Hersteller: Diodes Incorporated
Description: MOSFET N CH 20V 2.8A SOT323
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.8A (Ta)
Rds On (Max) @ Id, Vgs: 56mOhm @ 2A, 4.5V
Power Dissipation (Max): 430mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-323
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 5.4 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 400 pF @ 10 V
auf Bestellung 36000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
3000+0.13 EUR
6000+0.12 EUR
9000+0.11 EUR
21000+0.1 EUR
30000+0.097 EUR
Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
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Technische Details DMN2065UW-7 Diodes Incorporated

Description: MOSFET N CH 20V 2.8A SOT323, Packaging: Tape & Reel (TR), Package / Case: SC-70, SOT-323, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 2.8A (Ta), Rds On (Max) @ Id, Vgs: 56mOhm @ 2A, 4.5V, Power Dissipation (Max): 430mW (Ta), Vgs(th) (Max) @ Id: 1V @ 250µA, Supplier Device Package: SOT-323, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V, Vgs (Max): ±12V, Drain to Source Voltage (Vdss): 20 V, Gate Charge (Qg) (Max) @ Vgs: 5.4 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 400 pF @ 10 V.

Weitere Produktangebote DMN2065UW-7 nach Preis ab 0.16 EUR bis 0.62 EUR

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit Preis
DMN2065UW-7 DMN2065UW-7 Diodes Incorporated DMN2065UW.pdf Description: MOSFET N CH 20V 2.8A SOT323
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.8A (Ta)
Rds On (Max) @ Id, Vgs: 56mOhm @ 2A, 4.5V
Power Dissipation (Max): 430mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-323
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 5.4 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 400 pF @ 10 V
auf Bestellung 41579 Stücke:
Lieferzeit 10-14 Tag (e)
29+0.62 EUR
46+0.38 EUR
100+0.24 EUR
500+0.18 EUR
1000+0.16 EUR
Mindestbestellmenge: 29 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
DMN2065UW-7 DMN2065UW-7 Diodes Incorporated DMN2065UW-219393.pdf MOSFET MOSFET BVDSS: 8V-24V 8V-24V SOT323 T&R 3K
auf Bestellung 16043 Stücke:
Lieferzeit 10-14 Tag (e)
Im Einkaufswagen  Stück im Wert von  UAH
DMN2065UW-7 DMN2065UW.pdf
Hersteller: Diodes Incorporated
Description: MOSFET N CH 20V 2.8A SOT323
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.8A (Ta)
Rds On (Max) @ Id, Vgs: 56mOhm @ 2A, 4.5V
Power Dissipation (Max): 430mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-323
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 5.4 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 400 pF @ 10 V
auf Bestellung 41579 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
29+0.62 EUR
46+0.38 EUR
100+0.24 EUR
500+0.18 EUR
1000+0.16 EUR
Mindestbestellmenge: 29 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
DMN2065UW-7 DMN2065UW-219393.pdf
Hersteller: Diodes Incorporated
MOSFET MOSFET BVDSS: 8V-24V 8V-24V SOT323 T&R 3K
auf Bestellung 16043 Stücke:
Lieferzeit 10-14 Tag (e)
Im Einkaufswagen  Stück im Wert von  UAH