DMN22M5UFG-7 Diodes Incorporated
Hersteller: Diodes IncorporatedDescription: MOSFET N-CH 20V 27A POWERDI3333
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Ta), 27A (Tc)
Rds On (Max) @ Id, Vgs: 2mOhm @ 13.5A, 4.5V
Power Dissipation (Max): 600mW (Ta)
Vgs(th) (Max) @ Id: 1.3V @ 250µA
Supplier Device Package: PowerDI3333-8
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 99 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3926 pF @ 10 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 148000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 2000+ | 0.46 EUR |
| 6000+ | 0.45 EUR |
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Technische Details DMN22M5UFG-7 Diodes Incorporated
Description: MOSFET N-CH 20V 27A POWERDI3333, Packaging: Tape & Reel (TR), Package / Case: 8-PowerVDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 24A (Ta), 27A (Tc), Rds On (Max) @ Id, Vgs: 2mOhm @ 13.5A, 4.5V, Power Dissipation (Max): 600mW (Ta), Vgs(th) (Max) @ Id: 1.3V @ 250µA, Supplier Device Package: PowerDI3333-8, Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V, Vgs (Max): ±12V, Drain to Source Voltage (Vdss): 20 V, Gate Charge (Qg) (Max) @ Vgs: 99 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 3926 pF @ 10 V, Grade: Automotive, Qualification: AEC-Q101.
Weitere Produktangebote DMN22M5UFG-7 nach Preis ab 0.48 EUR bis 1.36 EUR
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DMN22M5UFG-7 | Hersteller : Diodes Incorporated |
MOSFETs MOSFET BVDSS: 8V-24V PowerDI3333-8 T&R 2K |
auf Bestellung 28624 Stücke: Lieferzeit 10-14 Tag (e) |
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DMN22M5UFG-7 | Hersteller : Diodes Incorporated |
Description: MOSFET N-CH 20V 27A POWERDI3333 Packaging: Cut Tape (CT) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 24A (Ta), 27A (Tc) Rds On (Max) @ Id, Vgs: 2mOhm @ 13.5A, 4.5V Power Dissipation (Max): 600mW (Ta) Vgs(th) (Max) @ Id: 1.3V @ 250µA Supplier Device Package: PowerDI3333-8 Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 99 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3926 pF @ 10 V Grade: Automotive Qualification: AEC-Q101 |
auf Bestellung 148188 Stücke: Lieferzeit 10-14 Tag (e) |
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