DMN2300UFL4Q-7 Diodes Incorporated
| Anzahl | Preis |
|---|---|
| 3+ | 1.06 EUR |
| 10+ | 0.65 EUR |
| 100+ | 0.42 EUR |
| 500+ | 0.32 EUR |
| 1000+ | 0.25 EUR |
| 3000+ | 0.2 EUR |
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Technische Details DMN2300UFL4Q-7 Diodes Incorporated
Description: MOSFET 2N-CH 20V 2.11A 6DFN, Supplier Device Package: X2-DFN1310-6, Vgs(th) (Max) @ Id: 950mV @ 250µA, Gate Charge (Qg) (Max) @ Vgs: 3.2nC @ 4.5V, Rds On (Max) @ Id, Vgs: 195mOhm @ 300mA, 4.5V, Input Capacitance (Ciss) (Max) @ Vds: 135.2pF @ 0V, Current - Continuous Drain (Id) @ 25°C: 2.11A (Ta), Drain to Source Voltage (Vdss): 20V, Power - Max: 530mW (Ta), Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Configuration: 2 N-Channel (Dual), Mounting Type: Surface Mount, Package / Case: 6-XFDFN, Packaging: Tape & Reel (TR), Qualification: AEC-Q101, Grade: Automotive.
Weitere Produktangebote DMN2300UFL4Q-7 nach Preis ab 0.16 EUR bis 0.22 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Preis |
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| DMN2300UFL4Q-7 | Diodes Incorporated |
 Description: MOSFET 2N-CH 20V 2.11A 6DFNSupplier Device Package: X2-DFN1310-6 Vgs(th) (Max) @ Id: 950mV @ 250µA Gate Charge (Qg) (Max) @ Vgs: 3.2nC @ 4.5V Rds On (Max) @ Id, Vgs: 195mOhm @ 300mA, 4.5V Input Capacitance (Ciss) (Max) @ Vds: 135.2pF @ 0V Current - Continuous Drain (Id) @ 25°C: 2.11A (Ta) Drain to Source Voltage (Vdss): 20V Power - Max: 530mW (Ta) Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Configuration: 2 N-Channel (Dual) Mounting Type: Surface Mount Package / Case: 6-XFDFN Packaging: Tape & Reel (TR) Qualification: AEC-Q101 Grade: Automotive |
auf Bestellung 84000 Stücke: Lieferzeit 10-14 Tag (e) |
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| DMN2300UFL4Q-7 |
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Hersteller: Diodes Incorporated
Description: MOSFET 2N-CH 20V 2.11A 6DFN
Supplier Device Package: X2-DFN1310-6
Vgs(th) (Max) @ Id: 950mV @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 3.2nC @ 4.5V
Rds On (Max) @ Id, Vgs: 195mOhm @ 300mA, 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 135.2pF @ 0V
Current - Continuous Drain (Id) @ 25°C: 2.11A (Ta)
Drain to Source Voltage (Vdss): 20V
Power - Max: 530mW (Ta)
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 6-XFDFN
Packaging: Tape & Reel (TR)
Qualification: AEC-Q101
Grade: Automotive
Description: MOSFET 2N-CH 20V 2.11A 6DFN
Supplier Device Package: X2-DFN1310-6
Vgs(th) (Max) @ Id: 950mV @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 3.2nC @ 4.5V
Rds On (Max) @ Id, Vgs: 195mOhm @ 300mA, 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 135.2pF @ 0V
Current - Continuous Drain (Id) @ 25°C: 2.11A (Ta)
Drain to Source Voltage (Vdss): 20V
Power - Max: 530mW (Ta)
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 6-XFDFN
Packaging: Tape & Reel (TR)
Qualification: AEC-Q101
Grade: Automotive
auf Bestellung 84000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 3000+ | 0.22 EUR |
| 6000+ | 0.2 EUR |
| 9000+ | 0.19 EUR |
| 15000+ | 0.18 EUR |
| 21000+ | 0.17 EUR |
| 30000+ | 0.16 EUR |