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DMN2451UFB4Q-7R

DMN2451UFB4Q-7R Diodes Incorporated

DMN2451UFB4Q.pdf Hersteller: Diodes Incorporated
Description: MOSFET BVDSS: 8V~24V X2-DFN1006-
Packaging: Tape & Reel (TR)
Package / Case: 3-XFDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.3A (Ta)
Rds On (Max) @ Id, Vgs: 400mOhm @ 600mA, 4.5V
Power Dissipation (Max): 660mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: X2-DFN1006-3
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 6.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 32 pF @ 16 V
Qualification: AEC-Q101
auf Bestellung 246000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.08 EUR
6000+0.07 EUR
9000+0.06 EUR
15000+0.06 EUR
21000+0.06 EUR
30000+0.05 EUR
75000+0.05 EUR
150000+0.04 EUR
Mindestbestellmenge: 3000
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Technische Details DMN2451UFB4Q-7R Diodes Incorporated

Description: MOSFET BVDSS: 8V~24V X2-DFN1006-, Packaging: Tape & Reel (TR), Package / Case: 3-XFDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 1.3A (Ta), Rds On (Max) @ Id, Vgs: 400mOhm @ 600mA, 4.5V, Power Dissipation (Max): 660mW (Ta), Vgs(th) (Max) @ Id: 1V @ 250µA, Supplier Device Package: X2-DFN1006-3, Grade: Automotive, Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V, Vgs (Max): ±12V, Drain to Source Voltage (Vdss): 20 V, Gate Charge (Qg) (Max) @ Vgs: 6.4 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 32 pF @ 16 V, Qualification: AEC-Q101.

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DMN2451UFB4Q-7R Hersteller : Diodes Incorporated DMN2451UFB4Q.pdf MOSFET MOSFET BVDSS: 8V-24V X2-DFN1006-3 T&R 3K
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