DMN24H11DSQ-13 Diodes Incorporated
Hersteller: Diodes IncorporatedDescription: MOSFET N-CH 240V 270MA SOT23 T&R
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 270mA (Ta)
Rds On (Max) @ Id, Vgs: 11Ohm @ 300mA, 10V
Power Dissipation (Max): 750mW (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: SOT-23-3
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 240 V
Gate Charge (Qg) (Max) @ Vgs: 3.7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 76.8 pF @ 25 V
Qualification: AEC-Q101
auf Bestellung 550000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 10000+ | 0.24 EUR |
| 30000+ | 0.23 EUR |
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Technische Details DMN24H11DSQ-13 Diodes Incorporated
Description: MOSFET N-CH 240V 270MA SOT23 T&R, Packaging: Tape & Reel (TR), Package / Case: TO-236-3, SC-59, SOT-23-3, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 270mA (Ta), Rds On (Max) @ Id, Vgs: 11Ohm @ 300mA, 10V, Power Dissipation (Max): 750mW (Ta), Vgs(th) (Max) @ Id: 3V @ 250µA, Supplier Device Package: SOT-23-3, Grade: Automotive, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 240 V, Gate Charge (Qg) (Max) @ Vgs: 3.7 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 76.8 pF @ 25 V, Qualification: AEC-Q101.
Weitere Produktangebote DMN24H11DSQ-13 nach Preis ab 0.26 EUR bis 0.81 EUR
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DMN24H11DSQ-13 | Hersteller : Diodes Incorporated |
MOSFET MOSFET BVDSS: 101V-250V |
auf Bestellung 9997 Stücke: Lieferzeit 10-14 Tag (e) |
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DMN24H11DSQ-13 | Hersteller : Diodes Incorporated |
Description: MOSFET N-CH 240V 270MA SOT23 T&R Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 270mA (Ta) Rds On (Max) @ Id, Vgs: 11Ohm @ 300mA, 10V Power Dissipation (Max): 750mW (Ta) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: SOT-23-3 Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 240 V Gate Charge (Qg) (Max) @ Vgs: 3.7 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 76.8 pF @ 25 V Qualification: AEC-Q101 |
auf Bestellung 550000 Stücke: Lieferzeit 10-14 Tag (e) |
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| DMN24H11DSQ-13 | Hersteller : Diodes Inc |
Trans MOSFET N-CH 240V 0.27A Automotive T/R |
Produkt ist nicht verfügbar |
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DMN24H11DSQ-13 | Hersteller : DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 240V; 220mA; Idm: 0.8A; 1.2W; SOT23 Mounting: SMD Kind of package: reel; tape Pulsed drain current: 0.8A Case: SOT23 Drain-source voltage: 240V Drain current: 0.22A On-state resistance: 12Ω Type of transistor: N-MOSFET Power dissipation: 1.2W Polarisation: unipolar Gate charge: 3.7nC Kind of channel: enhanced Gate-source voltage: ±20V Anzahl je Verpackung: 10000 Stücke |
Produkt ist nicht verfügbar |
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DMN24H11DSQ-13 | Hersteller : DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 240V; 220mA; Idm: 0.8A; 1.2W; SOT23 Mounting: SMD Kind of package: reel; tape Pulsed drain current: 0.8A Case: SOT23 Drain-source voltage: 240V Drain current: 0.22A On-state resistance: 12Ω Type of transistor: N-MOSFET Power dissipation: 1.2W Polarisation: unipolar Gate charge: 3.7nC Kind of channel: enhanced Gate-source voltage: ±20V |
Produkt ist nicht verfügbar |