DMN26D0UT-7 Diodes Incorporated
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 20V 230MA SOT523
Packaging: Tape & Reel (TR)
Package / Case: SOT-523
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 230mA (Ta)
Rds On (Max) @ Id, Vgs: 3Ohm @ 100mA, 4.5V
Power Dissipation (Max): 300mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-523
Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4.5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 20 V
Input Capacitance (Ciss) (Max) @ Vds: 14.1 pF @ 15 V
| Anzahl | Preis |
|---|---|
| 3000+ | 0.064 EUR |
| 6000+ | 0.06 EUR |
| 9000+ | 0.057 EUR |
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Technische Details DMN26D0UT-7 Diodes Incorporated
Description: MOSFET N-CH 20V 230MA SOT523, Packaging: Tape & Reel (TR), Package / Case: SOT-523, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 230mA (Ta), Rds On (Max) @ Id, Vgs: 3Ohm @ 100mA, 4.5V, Power Dissipation (Max): 300mW (Ta), Vgs(th) (Max) @ Id: 1V @ 250µA, Supplier Device Package: SOT-523, Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4.5V, Vgs (Max): ±10V, Drain to Source Voltage (Vdss): 20 V, Input Capacitance (Ciss) (Max) @ Vds: 14.1 pF @ 15 V.
Weitere Produktangebote DMN26D0UT-7 nach Preis ab 0.055 EUR bis 0.39 EUR
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DMN26D0UT-7 | Diodes Incorporated |
MOSFETs N-Ch -20V VDSS 230mA 300mW |
auf Bestellung 25897 Stücke: Lieferzeit 10-14 Tag (e) |
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DMN26D0UT-7 | Diodes Incorporated |
Description: MOSFET N-CH 20V 230MA SOT523 Packaging: Cut Tape (CT) Package / Case: SOT-523 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 230mA (Ta) Rds On (Max) @ Id, Vgs: 3Ohm @ 100mA, 4.5V Power Dissipation (Max): 300mW (Ta) Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: SOT-523 Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4.5V Vgs (Max): ±10V Drain to Source Voltage (Vdss): 20 V Input Capacitance (Ciss) (Max) @ Vds: 14.1 pF @ 15 V |
auf Bestellung 2229584 Stücke: Lieferzeit 10-14 Tag (e) |
|
| DMN26D0UT-7 |
|
Hersteller: Diodes Incorporated
MOSFETs N-Ch -20V VDSS 230mA 300mW
MOSFETs N-Ch -20V VDSS 230mA 300mW
auf Bestellung 25897 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 9+ | 0.35 EUR |
| 20+ | 0.14 EUR |
| 100+ | 0.093 EUR |
| 3000+ | 0.056 EUR |
| 6000+ | 0.055 EUR |
| DMN26D0UT-7 |
|
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 20V 230MA SOT523
Packaging: Cut Tape (CT)
Package / Case: SOT-523
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 230mA (Ta)
Rds On (Max) @ Id, Vgs: 3Ohm @ 100mA, 4.5V
Power Dissipation (Max): 300mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-523
Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4.5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 20 V
Input Capacitance (Ciss) (Max) @ Vds: 14.1 pF @ 15 V
Description: MOSFET N-CH 20V 230MA SOT523
Packaging: Cut Tape (CT)
Package / Case: SOT-523
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 230mA (Ta)
Rds On (Max) @ Id, Vgs: 3Ohm @ 100mA, 4.5V
Power Dissipation (Max): 300mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-523
Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4.5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 20 V
Input Capacitance (Ciss) (Max) @ Vds: 14.1 pF @ 15 V
auf Bestellung 2229584 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 46+ | 0.39 EUR |
| 97+ | 0.18 EUR |
| 177+ | 0.1 EUR |