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DMN2710UVQ-13

DMN2710UVQ-13 Diodes Incorporated

DMN2710UVQ.pdf Hersteller: Diodes Incorporated
Description: MOSFET 2N-CH 20V 0.92A SOT563
Packaging: Tape & Reel (TR)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 500mW (Ta)
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 920mA (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 42pF @ 16V
Rds On (Max) @ Id, Vgs: 450mOhm @ 600mA, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 0.6nC @ 4.5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-563
Grade: Automotive
Part Status: Active
Qualification: AEC-Q101
auf Bestellung 150000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
10000+0.09 EUR
20000+0.08 EUR
30000+0.08 EUR
50000+0.07 EUR
70000+0.07 EUR
100000+0.07 EUR
Mindestbestellmenge: 10000
Im Einkaufswagen  Stück im Wert von  UAH
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Technische Details DMN2710UVQ-13 Diodes Incorporated

Description: MOSFET 2N-CH 20V 0.92A SOT563, Packaging: Tape & Reel (TR), Package / Case: SOT-563, SOT-666, Mounting Type: Surface Mount, Configuration: 2 N-Channel (Dual), Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 500mW (Ta), Drain to Source Voltage (Vdss): 20V, Current - Continuous Drain (Id) @ 25°C: 920mA (Ta), Input Capacitance (Ciss) (Max) @ Vds: 42pF @ 16V, Rds On (Max) @ Id, Vgs: 450mOhm @ 600mA, 4.5V, Gate Charge (Qg) (Max) @ Vgs: 0.6nC @ 4.5V, Vgs(th) (Max) @ Id: 1V @ 250µA, Supplier Device Package: SOT-563, Grade: Automotive, Part Status: Active, Qualification: AEC-Q101.

Weitere Produktangebote DMN2710UVQ-13 nach Preis ab 0.10 EUR bis 0.49 EUR

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DMN2710UVQ-13 DMN2710UVQ-13 Hersteller : Diodes Incorporated DMN2710UVQ.pdf Description: MOSFET 2N-CH 20V 0.92A SOT563
Packaging: Cut Tape (CT)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 500mW (Ta)
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 920mA (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 42pF @ 16V
Rds On (Max) @ Id, Vgs: 450mOhm @ 600mA, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 0.6nC @ 4.5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-563
Grade: Automotive
Part Status: Active
Qualification: AEC-Q101
auf Bestellung 159702 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
36+0.49 EUR
59+0.30 EUR
100+0.19 EUR
500+0.14 EUR
1000+0.12 EUR
2000+0.11 EUR
5000+0.10 EUR
Mindestbestellmenge: 36
Im Einkaufswagen  Stück im Wert von  UAH
DMN2710UVQ-13 Hersteller : Diodes Incorporated DMN2710UVQ-3103573.pdf MOSFETs MOSFET BVDSS: 8V-24V SOT563 T&R 10K
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