DMN2710UWQ-7 Diodes Incorporated
| Anzahl | Preis |
|---|---|
| 7+ | 0.42 EUR |
| 11+ | 0.26 EUR |
| 100+ | 0.16 EUR |
| 500+ | 0.12 EUR |
| 1000+ | 0.11 EUR |
| 3000+ | 0.1 EUR |
| 6000+ | 0.077 EUR |
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Technische Details DMN2710UWQ-7 Diodes Incorporated
Description: MOSFET BVDSS: 8V~24V SOT323 T&R, Packaging: Tape & Reel (TR), Package / Case: SC-70, SOT-323, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 900mA (Ta), Rds On (Max) @ Id, Vgs: 450mOhm @ 600mA, 4.5V, Power Dissipation (Max): 470mW (Ta), Vgs(th) (Max) @ Id: 1V @ 250µA, Supplier Device Package: SOT-323, Grade: Automotive, Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V, Vgs (Max): ±6V, Drain to Source Voltage (Vdss): 20 V, Gate Charge (Qg) (Max) @ Vgs: 0.6 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 42 pF @ 16 V, Qualification: AEC-Q101.
Weitere Produktangebote DMN2710UWQ-7 nach Preis ab 0.1 EUR bis 0.42 EUR
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DMN2710UWQ-7 | Hersteller : Diodes Incorporated |
 Description: MOSFET BVDSS: 8V~24V SOT323 T&RPackaging: Cut Tape (CT) Package / Case: SC-70, SOT-323 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 900mA (Ta) Rds On (Max) @ Id, Vgs: 450mOhm @ 600mA, 4.5V Power Dissipation (Max): 470mW (Ta) Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: SOT-323 Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs (Max): ±6V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 0.6 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 42 pF @ 16 V Grade: Automotive Qualification: AEC-Q101 |
auf Bestellung 2395 Stücke: Lieferzeit 10-14 Tag (e) |
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DMN2710UWQ-7 | Hersteller : Diodes Incorporated |
Description: MOSFET BVDSS: 8V~24V SOT323 T&R Packaging: Tape & Reel (TR) Package / Case: SC-70, SOT-323 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 900mA (Ta) Rds On (Max) @ Id, Vgs: 450mOhm @ 600mA, 4.5V Power Dissipation (Max): 470mW (Ta) Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: SOT-323 Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs (Max): ±6V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 0.6 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 42 pF @ 16 V Qualification: AEC-Q101 |
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