DMN3008SCP10-7 Diodes Incorporated
Hersteller: Diodes Incorporated
Description: MOSFET BVDSS: 25V 30V X4-DSN3415
Packaging: Tape & Reel (TR)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14.6A (Ta)
Rds On (Max) @ Id, Vgs: 7.8mOhm @ 7A, 10V
Power Dissipation (Max): 2.7W (Ta)
Vgs(th) (Max) @ Id: 2.3V @ 250µA
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 31.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1476 pF @ 15 V
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Technische Details DMN3008SCP10-7 Diodes Incorporated
Description: MOSFET BVDSS: 25V 30V X4-DSN3415, Packaging: Tape & Reel (TR), Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 14.6A (Ta), Rds On (Max) @ Id, Vgs: 7.8mOhm @ 7A, 10V, Power Dissipation (Max): 2.7W (Ta), Vgs(th) (Max) @ Id: 2.3V @ 250µA, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 31.3 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1476 pF @ 15 V.
Weitere Produktangebote DMN3008SCP10-7
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Preis |
|---|---|---|---|---|---|
| DMN3008SCP10-7 | Diodes Incorporated |
MOSFETs MOSFETBVDSS: 25V-30V |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 3000 Stücke Im Einkaufswagen Stück im Wert von UAH | |
| DMN3008SCP10-7 | DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 2.7W; X4-DSN3015-10 Drain-source voltage: 30V Case: X4-DSN3015-10 Polarisation: unipolar On-state resistance: 7.8mΩ Power dissipation: 2.7W Type of transistor: N-MOSFET Mounting: SMD Gate charge: 15.8nC |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 3000 Stücke Im Einkaufswagen Stück im Wert von UAH |
| DMN3008SCP10-7 |
|
Hersteller: Diodes Incorporated
MOSFETs MOSFETBVDSS: 25V-30V
MOSFETs MOSFETBVDSS: 25V-30V
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| DMN3008SCP10-7 |
|
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 2.7W; X4-DSN3015-10
Drain-source voltage: 30V
Case: X4-DSN3015-10
Polarisation: unipolar
On-state resistance: 7.8mΩ
Power dissipation: 2.7W
Type of transistor: N-MOSFET
Mounting: SMD
Gate charge: 15.8nC
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 2.7W; X4-DSN3015-10
Drain-source voltage: 30V
Case: X4-DSN3015-10
Polarisation: unipolar
On-state resistance: 7.8mΩ
Power dissipation: 2.7W
Type of transistor: N-MOSFET
Mounting: SMD
Gate charge: 15.8nC
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen
Stück im Wert von UAH