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DMN3010LFG-7

DMN3010LFG-7 Diodes Incorporated

DMN3010LFG.pdf Hersteller: Diodes Incorporated
Description: MOSFET N-CH 30V 11A PWRDI3333
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Ta), 30A (Tc)
Rds On (Max) @ Id, Vgs: 8.5mOhm @ 18A, 10V
Power Dissipation (Max): 900mW (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerDI3333-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 37 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2075 pF @ 15 V
auf Bestellung 18000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2000+0.33 EUR
6000+0.31 EUR
10000+0.29 EUR
Mindestbestellmenge: 2000
Im Einkaufswagen  Stück im Wert von  UAH
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Technische Details DMN3010LFG-7 Diodes Incorporated

Description: MOSFET N-CH 30V 11A PWRDI3333, Packaging: Tape & Reel (TR), Package / Case: 8-PowerVDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 11A (Ta), 30A (Tc), Rds On (Max) @ Id, Vgs: 8.5mOhm @ 18A, 10V, Power Dissipation (Max): 900mW (Ta), Vgs(th) (Max) @ Id: 2.5V @ 250µA, Supplier Device Package: PowerDI3333-8, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 37 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 2075 pF @ 15 V.

Weitere Produktangebote DMN3010LFG-7 nach Preis ab 0.29 EUR bis 0.95 EUR

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DMN3010LFG-7 DMN3010LFG-7 Hersteller : Diodes Incorporated DMN3010LFG.pdf MOSFETs N-Ch Enh Mode FET 30Vdss 20Vgss
auf Bestellung 5528 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3+0.95 EUR
10+0.81 EUR
100+0.56 EUR
500+0.44 EUR
1000+0.36 EUR
2000+0.29 EUR
Mindestbestellmenge: 3
Im Einkaufswagen  Stück im Wert von  UAH
DMN3010LFG-7 DMN3010LFG-7 Hersteller : Diodes Incorporated DMN3010LFG.pdf Description: MOSFET N-CH 30V 11A PWRDI3333
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Ta), 30A (Tc)
Rds On (Max) @ Id, Vgs: 8.5mOhm @ 18A, 10V
Power Dissipation (Max): 900mW (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerDI3333-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 37 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2075 pF @ 15 V
auf Bestellung 23246 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
19+0.95 EUR
22+0.83 EUR
100+0.57 EUR
500+0.45 EUR
1000+0.36 EUR
Mindestbestellmenge: 19
Im Einkaufswagen  Stück im Wert von  UAH
DMN3010LFG-7 Hersteller : DIODES INCORPORATED DMN3010LFG.pdf DMN3010LFG-7 SMD N channel transistors
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