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DMN3010LSS-13

DMN3010LSS-13 Diodes Incorporated

ds31259.pdf Hersteller: Diodes Incorporated
MOSFET NMOS SINGLE N-CHANNL 30V 16A
auf Bestellung 2330 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3+1.18 EUR
10+1.02 EUR
100+0.7 EUR
500+0.59 EUR
1000+0.5 EUR
2500+0.42 EUR
5000+0.4 EUR
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Technische Details DMN3010LSS-13 Diodes Incorporated

Description: MOSFET N-CH 30V 16A 8SOP, Packaging: Tape & Reel (TR), Package / Case: 8-SOIC (0.154", 3.90mm Width), Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 16A (Ta), Rds On (Max) @ Id, Vgs: 9mOhm @ 16A, 10V, Power Dissipation (Max): 2.5W (Ta), Vgs(th) (Max) @ Id: 2V @ 250µA, Supplier Device Package: 8-SOP, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 43.7 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 2096 pF @ 15 V.

Weitere Produktangebote DMN3010LSS-13 nach Preis ab 0.51 EUR bis 1.2 EUR

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DMN3010LSS-13 DMN3010LSS-13 Hersteller : Diodes Incorporated ds31259.pdf Description: MOSFET N-CH 30V 16A 8SOP
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16A (Ta)
Rds On (Max) @ Id, Vgs: 9mOhm @ 16A, 10V
Power Dissipation (Max): 2.5W (Ta)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: 8-SOP
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 43.7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2096 pF @ 15 V
auf Bestellung 2490 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
15+1.2 EUR
18+1.03 EUR
100+0.72 EUR
500+0.6 EUR
1000+0.51 EUR
Mindestbestellmenge: 15
Im Einkaufswagen  Stück im Wert von  UAH
DMN3010LSS-13 DMN3010LSS-13 Hersteller : Diodes Inc 707ds31259.pdf Trans MOSFET N-CH 30V 16A 8-Pin SOP T/R
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DMN3010LSS-13 Hersteller : DIODES INCORPORATED ds31259.pdf DMN3010LSS-13 SMD N channel transistors
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
DMN3010LSS-13 DMN3010LSS-13 Hersteller : Diodes Incorporated ds31259.pdf Description: MOSFET N-CH 30V 16A 8SOP
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16A (Ta)
Rds On (Max) @ Id, Vgs: 9mOhm @ 16A, 10V
Power Dissipation (Max): 2.5W (Ta)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: 8-SOP
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 43.7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2096 pF @ 15 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH