DMN3016LDN-13 DIODES INCORPORATED
Hersteller: DIODES INCORPORATEDCategory: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 7.3A; Idm: 45A; 1.6W
Case: V-DFN3030-8
Mounting: SMD
Kind of package: reel; tape
Pulsed drain current: 45A
Power dissipation: 1.6W
Gate charge: 25.1nC
Polarisation: unipolar
Drain current: 7.3A
Kind of channel: enhanced
Drain-source voltage: 30V
Type of transistor: N-MOSFET
On-state resistance: 24mΩ
Gate-source voltage: ±20V
Anzahl je Verpackung: 10000 Stücke
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Technische Details DMN3016LDN-13 DIODES INCORPORATED
Category: SMD N channel transistors, Description: Transistor: N-MOSFET; unipolar; 30V; 7.3A; Idm: 45A; 1.6W, Case: V-DFN3030-8, Mounting: SMD, Kind of package: reel; tape, Pulsed drain current: 45A, Power dissipation: 1.6W, Gate charge: 25.1nC, Polarisation: unipolar, Drain current: 7.3A, Kind of channel: enhanced, Drain-source voltage: 30V, Type of transistor: N-MOSFET, On-state resistance: 24mΩ, Gate-source voltage: ±20V, Anzahl je Verpackung: 10000 Stücke.
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Verfügbarkeit |
Preis ohne MwSt |
|---|---|---|---|---|---|
| DMN3016LDN-13 | Hersteller : Diodes Incorporated |
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| DMN3016LDN-13 | Hersteller : Diodes Incorporated |
MOSFET MOSFET BVDSS: 25V 30V V-DFN3030-8 T&R 10K |
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| DMN3016LDN-13 | Hersteller : DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 7.3A; Idm: 45A; 1.6W Case: V-DFN3030-8 Mounting: SMD Kind of package: reel; tape Pulsed drain current: 45A Power dissipation: 1.6W Gate charge: 25.1nC Polarisation: unipolar Drain current: 7.3A Kind of channel: enhanced Drain-source voltage: 30V Type of transistor: N-MOSFET On-state resistance: 24mΩ Gate-source voltage: ±20V |
Produkt ist nicht verfügbar |