Technische Details DMN3016LDV-13 Diodes Inc
Category: SMD N channel transistors, Description: Transistor: N-MOSFET; unipolar; 30V; 17A; Idm: 70A; 1.8W, Case: PowerDI3333-8, Mounting: SMD, Kind of package: reel; tape, Pulsed drain current: 70A, Power dissipation: 1.8W, Gate charge: 21nC, Polarisation: unipolar, Drain current: 17A, Kind of channel: enhanced, Drain-source voltage: 30V, Type of transistor: N-MOSFET, On-state resistance: 17mΩ, Gate-source voltage: ±20V, Anzahl je Verpackung: 3000 Stücke.
Weitere Produktangebote DMN3016LDV-13
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt |
|---|---|---|---|---|---|
| DMN3016LDV-13 | Hersteller : DIODES INCORPORATED |
 Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 30V; 17A; Idm: 70A; 1.8W Case: PowerDI3333-8 Mounting: SMD Kind of package: reel; tape Pulsed drain current: 70A Power dissipation: 1.8W Gate charge: 21nC Polarisation: unipolar Drain current: 17A Kind of channel: enhanced Drain-source voltage: 30V Type of transistor: N-MOSFET On-state resistance: 17mΩ Gate-source voltage: ±20V Anzahl je Verpackung: 3000 Stücke |
Produkt ist nicht verfügbar |
||
 |
DMN3016LDV-13 | Hersteller : Diodes Incorporated |
Description: MOSFET 2 N-CH 21A POWERDI3333-8 |
Produkt ist nicht verfügbar |
|
 |
DMN3016LDV-13 | Hersteller : Diodes Incorporated |
MOSFET MOSFET BVDSS 25V-30V |
Produkt ist nicht verfügbar |
|
| DMN3016LDV-13 | Hersteller : DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 17A; Idm: 70A; 1.8W Case: PowerDI3333-8 Mounting: SMD Kind of package: reel; tape Pulsed drain current: 70A Power dissipation: 1.8W Gate charge: 21nC Polarisation: unipolar Drain current: 17A Kind of channel: enhanced Drain-source voltage: 30V Type of transistor: N-MOSFET On-state resistance: 17mΩ Gate-source voltage: ±20V |
Produkt ist nicht verfügbar |