DMN3018SFG-13 Diodes Incorporated
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 30V 8.5A PWRDI3333-8
Input Capacitance (Ciss) (Max) @ Vds: 697 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 13.2 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±25V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: PowerDI3333-8
Vgs(th) (Max) @ Id: 2.1V @ 250µA
Power Dissipation (Max): 1W (Ta)
Rds On (Max) @ Id, Vgs: 21mOhm @ 10A, 10V
Current - Continuous Drain (Id) @ 25°C: 8.5A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Packaging: Tape & Reel (TR)
| Anzahl | Preis |
|---|---|
| 3000+ | 0.17 EUR |
| 15000+ | 0.16 EUR |
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Technische Details DMN3018SFG-13 Diodes Incorporated
Description: MOSFET N-CH 30V 8.5A PWRDI3333-8, Input Capacitance (Ciss) (Max) @ Vds: 697 pF @ 15 V, Gate Charge (Qg) (Max) @ Vgs: 13.2 nC @ 10 V, Drain to Source Voltage (Vdss): 30 V, Vgs (Max): ±25V, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Part Status: Active, Supplier Device Package: PowerDI3333-8, Vgs(th) (Max) @ Id: 2.1V @ 250µA, Power Dissipation (Max): 1W (Ta), Rds On (Max) @ Id, Vgs: 21mOhm @ 10A, 10V, Current - Continuous Drain (Id) @ 25°C: 8.5A (Ta), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: 8-PowerVDFN, Packaging: Tape & Reel (TR).
Weitere Produktangebote DMN3018SFG-13 nach Preis ab 0.22 EUR bis 1.01 EUR
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DMN3018SFG-13 | Hersteller : Diodes Incorporated |
Description: MOSFET N-CH 30V 8.5A PWRDI3333-8 Input Capacitance (Ciss) (Max) @ Vds: 697 pF @ 15 V Gate Charge (Qg) (Max) @ Vgs: 13.2 nC @ 10 V Drain to Source Voltage (Vdss): 30 V Vgs (Max): ±25V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Part Status: Active Supplier Device Package: PowerDI3333-8 Vgs(th) (Max) @ Id: 2.1V @ 250µA Power Dissipation (Max): 1W (Ta) Rds On (Max) @ Id, Vgs: 21mOhm @ 10A, 10V Current - Continuous Drain (Id) @ 25°C: 8.5A (Ta) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerVDFN Packaging: Cut Tape (CT) |
auf Bestellung 33796 Stücke: Lieferzeit 10-14 Tag (e) |
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DMN3018SFG-13 | Hersteller : Diodes Incorporated |
MOSFETs 30V N-Ch Enh Mode 25Vgss 1.0W 697pF |
auf Bestellung 177 Stücke: Lieferzeit 10-14 Tag (e) |
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