DMN3024LSS-13 Diodes Incorporated
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 30V 6.4A 8SO
Input Capacitance (Ciss) (Max) @ Vds: 608 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 12.9 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: 8-SO
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 1.6W (Ta)
Rds On (Max) @ Id, Vgs: 24mOhm @ 7A, 10V
Current - Continuous Drain (Id) @ 25°C: 6.4A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Cut Tape (CT)
| Anzahl | Privatkunde |
|---|---|
| 10+ | 2.2 EUR |
| 16+ | 1.37 EUR |
| 25+ | 1.15 EUR |
| 50+ | 1.01 EUR |
| 100+ | 0.89 EUR |
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Technische Details DMN3024LSS-13 Diodes Incorporated
Description: MOSFET N-CH 30V 6.4A 8SO, Current - Continuous Drain (Id) @ 25°C: 6.4A (Ta), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: 8-SOIC (0.154", 3.90mm Width), Packaging: Tape & Reel (TR), Input Capacitance (Ciss) (Max) @ Vds: 608 pF @ 15 V, Gate Charge (Qg) (Max) @ Vgs: 12.9 nC @ 10 V, Drain to Source Voltage (Vdss): 30 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Part Status: Active, Supplier Device Package: 8-SO, Vgs(th) (Max) @ Id: 3V @ 250µA, Power Dissipation (Max): 1.6W (Ta), Rds On (Max) @ Id, Vgs: 24mOhm @ 7A, 10V.
Weitere Produktangebote DMN3024LSS-13 nach Preis ab 0.52 EUR bis 2.23 EUR
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DMN3024LSS-13 | Diodes Incorporated |
MOSFETs ENHANCE MODE MOSFET 30V N-CHANNEL |
auf Bestellung 241 Stücke: Lieferzeit 10-14 Tag (e) |
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DMN3024LSS-13 | Diodes Incorporated |
Description: MOSFET N-CH 30V 6.4A 8SO Current - Continuous Drain (Id) @ 25°C: 6.4A (Ta) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Packaging: Tape & Reel (TR) Input Capacitance (Ciss) (Max) @ Vds: 608 pF @ 15 V Gate Charge (Qg) (Max) @ Vgs: 12.9 nC @ 10 V Drain to Source Voltage (Vdss): 30 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Part Status: Active Supplier Device Package: 8-SO Vgs(th) (Max) @ Id: 3V @ 250µA Power Dissipation (Max): 1.6W (Ta) Rds On (Max) @ Id, Vgs: 24mOhm @ 7A, 10V |
auf Bestellung 1000 Stücke: Lieferzeit 10-14 Tag (e) |
Mindestbestellmenge: 1000 Stücke Im Einkaufswagen Stück im Wert von UAH |
| DMN3024LSS-13 |
|
Hersteller: Diodes Incorporated
MOSFETs ENHANCE MODE MOSFET 30V N-CHANNEL
MOSFETs ENHANCE MODE MOSFET 30V N-CHANNEL
auf Bestellung 241 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 2+ | 2.23 EUR |
| 10+ | 1.15 EUR |
| 100+ | 0.9 EUR |
| 500+ | 0.75 EUR |
| 1000+ | 0.65 EUR |
| 2500+ | 0.52 EUR |
| DMN3024LSS-13 |
|
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 30V 6.4A 8SO
Current - Continuous Drain (Id) @ 25°C: 6.4A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 608 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 12.9 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: 8-SO
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 1.6W (Ta)
Rds On (Max) @ Id, Vgs: 24mOhm @ 7A, 10V
Description: MOSFET N-CH 30V 6.4A 8SO
Current - Continuous Drain (Id) @ 25°C: 6.4A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 608 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 12.9 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: 8-SO
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 1.6W (Ta)
Rds On (Max) @ Id, Vgs: 24mOhm @ 7A, 10V
auf Bestellung 1000 Stücke:
Lieferzeit 10-14 Tag (e)