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DMN3025LFDF-13 Diodes Incorporated



Hersteller: Diodes Incorporated
MOSFET MOSFET BVDSS: 25V~30V U-DFN2020-6 T&R 10K
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Technische Details DMN3025LFDF-13 Diodes Incorporated

Category: SMD N channel transistors, Description: Transistor: N-MOSFET; unipolar; 30V; 7.9A; Idm: 40A; 1.3W, Case: U-DFN2020-6, Mounting: SMD, Kind of package: 13 inch reel; tape, Pulsed drain current: 40A, Power dissipation: 1.3W, Gate charge: 13.2nC, Polarisation: unipolar, Drain current: 7.9A, Kind of channel: enhancement, Drain-source voltage: 30V, Type of transistor: N-MOSFET, Gate-source voltage: ±20V, On-state resistance: 30mΩ.

Weitere Produktangebote DMN3025LFDF-13

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DMN3025LFDF-13 DIODES INCORPORATED Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 7.9A; Idm: 40A; 1.3W
Case: U-DFN2020-6
Mounting: SMD
Kind of package: 13 inch reel; tape
Pulsed drain current: 40A
Power dissipation: 1.3W
Gate charge: 13.2nC
Polarisation: unipolar
Drain current: 7.9A
Kind of channel: enhancement
Drain-source voltage: 30V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
On-state resistance: 30mΩ
Produkt ist nicht verfügbar
Mindestbestellmenge: 10000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
DMN3025LFDF-13
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 7.9A; Idm: 40A; 1.3W
Case: U-DFN2020-6
Mounting: SMD
Kind of package: 13 inch reel; tape
Pulsed drain current: 40A
Power dissipation: 1.3W
Gate charge: 13.2nC
Polarisation: unipolar
Drain current: 7.9A
Kind of channel: enhancement
Drain-source voltage: 30V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
On-state resistance: 30mΩ
Produkt ist nicht verfügbar
Mindestbestellmenge: 10000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH