Technische Details DMN3025LFG-13 Diodes Incorporated
Category: SMD N channel transistors, Description: Transistor: N-MOSFET; unipolar; 30V; 7.8A; Idm: 60A; 1.3W, Case: PowerDI3333-8, Mounting: SMD, Kind of package: 13 inch reel; tape, Pulsed drain current: 60A, Power dissipation: 1.3W, Gate charge: 11.6nC, Polarisation: unipolar, Drain current: 7.8A, Kind of channel: enhancement, Drain-source voltage: 30V, Type of transistor: N-MOSFET, Gate-source voltage: ±20V, On-state resistance: 28mΩ.
Weitere Produktangebote DMN3025LFG-13
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde |
|---|---|---|---|---|---|
| DMN3025LFG-13 | Diodes Incorporated |
 MOSFET 30V N-CH MOSFET |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |
| DMN3025LFG-13 | DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 7.8A; Idm: 60A; 1.3W Case: PowerDI3333-8 Mounting: SMD Kind of package: 13 inch reel; tape Pulsed drain current: 60A Power dissipation: 1.3W Gate charge: 11.6nC Polarisation: unipolar Drain current: 7.8A Kind of channel: enhancement Drain-source voltage: 30V Type of transistor: N-MOSFET Gate-source voltage: ±20V On-state resistance: 28mΩ |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 3 Stücke Im Einkaufswagen Stück im Wert von UAH |
| DMN3025LFG-13 |
|
Hersteller: Diodes Incorporated
MOSFET 30V N-CH MOSFET
MOSFET 30V N-CH MOSFET
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| DMN3025LFG-13 |
|
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 7.8A; Idm: 60A; 1.3W
Case: PowerDI3333-8
Mounting: SMD
Kind of package: 13 inch reel; tape
Pulsed drain current: 60A
Power dissipation: 1.3W
Gate charge: 11.6nC
Polarisation: unipolar
Drain current: 7.8A
Kind of channel: enhancement
Drain-source voltage: 30V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
On-state resistance: 28mΩ
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 7.8A; Idm: 60A; 1.3W
Case: PowerDI3333-8
Mounting: SMD
Kind of package: 13 inch reel; tape
Pulsed drain current: 60A
Power dissipation: 1.3W
Gate charge: 11.6nC
Polarisation: unipolar
Drain current: 7.8A
Kind of channel: enhancement
Drain-source voltage: 30V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
On-state resistance: 28mΩ
Produkt ist nicht verfügbar
Mindestbestellmenge: 3 Stücke
Im Einkaufswagen
Stück im Wert von UAH