DMN3025LFV-13 Diodes Incorporated
Hersteller: Diodes IncorporatedDescription: MOSFET N-CH 30V 25A POWERDI3333
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 25A (Tc)
Rds On (Max) @ Id, Vgs: 18mOhm @ 7A, 10V
Power Dissipation (Max): 900mW (Ta)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: PowerDI3333-8 (Type UX)
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 9.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 500 pF @ 15 V
Qualification: AEC-Q101
auf Bestellung 48000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 3000+ | 0.20 EUR |
| 6000+ | 0.19 EUR |
| 9000+ | 0.17 EUR |
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Technische Details DMN3025LFV-13 Diodes Incorporated
Description: MOSFET N-CH 30V 25A POWERDI3333, Packaging: Tape & Reel (TR), Package / Case: 8-PowerVDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 25A (Tc), Rds On (Max) @ Id, Vgs: 18mOhm @ 7A, 10V, Power Dissipation (Max): 900mW (Ta), Vgs(th) (Max) @ Id: 2V @ 250µA, Supplier Device Package: PowerDI3333-8 (Type UX), Grade: Automotive, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 9.8 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 500 pF @ 15 V, Qualification: AEC-Q101.
Weitere Produktangebote DMN3025LFV-13 nach Preis ab 0.18 EUR bis 0.72 EUR
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DMN3025LFV-13 | Hersteller : Diodes Incorporated |
MOSFETs MOSFET BVDSS: 25V-30V |
auf Bestellung 2655 Stücke: Lieferzeit 10-14 Tag (e) |
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DMN3025LFV-13 | Hersteller : Diodes Incorporated |
Description: MOSFET N-CH 30V 25A POWERDI3333 Packaging: Cut Tape (CT) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 25A (Tc) Rds On (Max) @ Id, Vgs: 18mOhm @ 7A, 10V Power Dissipation (Max): 900mW (Ta) Vgs(th) (Max) @ Id: 2V @ 250µA Supplier Device Package: PowerDI3333-8 (Type UX) Grade: Automotive Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 9.8 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 500 pF @ 15 V Qualification: AEC-Q101 |
auf Bestellung 51049 Stücke: Lieferzeit 10-14 Tag (e) |
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DMN3025LFV-13 | Hersteller : DIODES INC. |
Description: DIODES INC. - DMN3025LFV-13 - Leistungs-MOSFET, n-Kanal, 30 V, 25 A, 0.013 ohm, PowerDI 3333, Oberflächenmontage tariffCode: 85411000 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 30V rohsCompliant: YES Dauer-Drainstrom Id: 25A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 2V euEccn: NLR Verlustleistung: 900mW Bauform - Transistor: PowerDI 3333 Anzahl der Pins: 8Pin(s) Produktpalette: - productTraceability: Yes-Date/Lot Code Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 150°C Drain-Source-Durchgangswiderstand: 0.013ohm SVHC: No SVHC (15-Jan-2018) |
auf Bestellung 2710 Stücke: Lieferzeit 14-21 Tag (e) |
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DMN3025LFV-13 | Hersteller : DIODES INC. |
Description: DIODES INC. - DMN3025LFV-13 - Leistungs-MOSFET, n-Kanal, 30 V, 25 A, 0.013 ohm, PowerDI 3333, Oberflächenmontage tariffCode: 85411000 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 30V rohsCompliant: YES Dauer-Drainstrom Id: 25A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 2V euEccn: NLR Verlustleistung: 900mW Bauform - Transistor: PowerDI 3333 Anzahl der Pins: 8Pin(s) Produktpalette: - productTraceability: Yes-Date/Lot Code Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 150°C Drain-Source-Durchgangswiderstand: 0.013ohm SVHC: No SVHC (15-Jan-2018) |
auf Bestellung 2710 Stücke: Lieferzeit 14-21 Tag (e) |
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| DMN3025LFV-13 | Hersteller : DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 20A; Idm: 55A; 2.2W Power dissipation: 2.2W Polarisation: unipolar Kind of package: 13 inch reel; tape Gate charge: 9.8nC Kind of channel: enhancement Gate-source voltage: ±20V Pulsed drain current: 55A Mounting: SMD Case: PowerDI3333-8 Drain-source voltage: 30V Drain current: 20A On-state resistance: 30mΩ Type of transistor: N-MOSFET Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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| DMN3025LFV-13 | Hersteller : DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 20A; Idm: 55A; 2.2W Power dissipation: 2.2W Polarisation: unipolar Kind of package: 13 inch reel; tape Gate charge: 9.8nC Kind of channel: enhancement Gate-source voltage: ±20V Pulsed drain current: 55A Mounting: SMD Case: PowerDI3333-8 Drain-source voltage: 30V Drain current: 20A On-state resistance: 30mΩ Type of transistor: N-MOSFET |
Produkt ist nicht verfügbar |