DMN3032LE-13 Diodes Incorporated
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 30V 5.6A SOT223
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.6A (Ta)
Rds On (Max) @ Id, Vgs: 29mOhm @ 3.2A, 10V
Power Dissipation (Max): 1.8W (Ta)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: SOT-223-3
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 11.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 498 pF @ 15 V
| Anzahl | Privatkunde |
|---|---|
| 2500+ | 0.44 EUR |
| 7500+ | 0.38 EUR |
Artikel auf Bestellung
Nicht an unserem Lager — wir beziehen ihn nach Ihrer Bestellung vom Lieferantenlager.
Lieferzeit:
10-14 Tag (e)
Mindestmenge:
2500 Stücke
Produktrezensionen
Produktbewertung abgeben
Technische Details DMN3032LE-13 Diodes Incorporated
Description: MOSFET N-CH 30V 5.6A SOT223, Packaging: Tape & Reel (TR), Package / Case: TO-261-4, TO-261AA, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 5.6A (Ta), Rds On (Max) @ Id, Vgs: 29mOhm @ 3.2A, 10V, Power Dissipation (Max): 1.8W (Ta), Vgs(th) (Max) @ Id: 2V @ 250µA, Supplier Device Package: SOT-223-3, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 11.3 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 498 pF @ 15 V.
Weitere Produktangebote DMN3032LE-13 nach Preis ab 0.35 EUR bis 1.8 EUR
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DMN3032LE-13 | Diodes Incorporated |
MOSFETs FET BVDSS 25V 30V N-Ch 498pF 4.1nC |
auf Bestellung 17605 Stücke: Lieferzeit 10-14 Tag (e) |
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DMN3032LE-13 | Diodes Incorporated |
Description: MOSFET N-CH 30V 5.6A SOT223 Packaging: Cut Tape (CT) Package / Case: TO-261-4, TO-261AA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 5.6A (Ta) Rds On (Max) @ Id, Vgs: 29mOhm @ 3.2A, 10V Power Dissipation (Max): 1.8W (Ta) Vgs(th) (Max) @ Id: 2V @ 250µA Supplier Device Package: SOT-223-3 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 11.3 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 498 pF @ 15 V |
auf Bestellung 67315 Stücke: Lieferzeit 10-14 Tag (e) |
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DMN3032LE-13 | DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 4.1A; Idm: 25A; 1.8W; SOT223 Mounting: SMD Case: SOT223 On-state resistance: 29mΩ Pulsed drain current: 25A Power dissipation: 1.8W Polarisation: unipolar Drain current: 4.1A Kind of channel: enhancement Drain-source voltage: 30V Type of transistor: N-MOSFET Gate-source voltage: ±20V Kind of package: 13 inch reel; tape |
auf Bestellung 504 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
| DMN3032LE-13 |
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Hersteller: Diodes Incorporated
MOSFETs FET BVDSS 25V 30V N-Ch 498pF 4.1nC
MOSFETs FET BVDSS 25V 30V N-Ch 498pF 4.1nC
auf Bestellung 17605 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 3+ | 1.26 EUR |
| 10+ | 0.95 EUR |
| 100+ | 0.63 EUR |
| 500+ | 0.48 EUR |
| 1000+ | 0.44 EUR |
| 2500+ | 0.35 EUR |
| DMN3032LE-13 |
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Hersteller: Diodes Incorporated
Description: MOSFET N-CH 30V 5.6A SOT223
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.6A (Ta)
Rds On (Max) @ Id, Vgs: 29mOhm @ 3.2A, 10V
Power Dissipation (Max): 1.8W (Ta)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: SOT-223-3
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 11.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 498 pF @ 15 V
Description: MOSFET N-CH 30V 5.6A SOT223
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.6A (Ta)
Rds On (Max) @ Id, Vgs: 29mOhm @ 3.2A, 10V
Power Dissipation (Max): 1.8W (Ta)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: SOT-223-3
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 11.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 498 pF @ 15 V
auf Bestellung 67315 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 12+ | 1.8 EUR |
| 19+ | 1.11 EUR |
| 25+ | 0.93 EUR |
| 50+ | 0.82 EUR |
| 100+ | 0.73 EUR |
| DMN3032LE-13 |
|
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 4.1A; Idm: 25A; 1.8W; SOT223
Mounting: SMD
Case: SOT223
On-state resistance: 29mΩ
Pulsed drain current: 25A
Power dissipation: 1.8W
Polarisation: unipolar
Drain current: 4.1A
Kind of channel: enhancement
Drain-source voltage: 30V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: 13 inch reel; tape
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 4.1A; Idm: 25A; 1.8W; SOT223
Mounting: SMD
Case: SOT223
On-state resistance: 29mΩ
Pulsed drain current: 25A
Power dissipation: 1.8W
Polarisation: unipolar
Drain current: 4.1A
Kind of channel: enhancement
Drain-source voltage: 30V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: 13 inch reel; tape
auf Bestellung 504 Stücke:
Lieferzeit 14-21 Tag (e)