auf Bestellung 24000 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 3000+ | 0.18 EUR |
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Technische Details DMN3033LSN-7 Diodes Zetex
Description: MOSFET N-CH 30V 6A SC59-3, Packaging: Tape & Reel (TR), Package / Case: TO-236-3, SC-59, SOT-23-3, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 6A (Ta), Rds On (Max) @ Id, Vgs: 30mOhm @ 6A, 10V, Power Dissipation (Max): 1.4W (Ta), Vgs(th) (Max) @ Id: 2.1V @ 250µA, Supplier Device Package: SC-59-3, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 10.5 nC @ 5 V, Input Capacitance (Ciss) (Max) @ Vds: 755 pF @ 10 V.
Weitere Produktangebote DMN3033LSN-7 nach Preis ab 0.18 EUR bis 0.83 EUR
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DMN3033LSN-7 | Hersteller : Diodes Incorporated |
 Description: MOSFET N-CH 30V 6A SC59-3Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 6A (Ta) Rds On (Max) @ Id, Vgs: 30mOhm @ 6A, 10V Power Dissipation (Max): 1.4W (Ta) Vgs(th) (Max) @ Id: 2.1V @ 250µA Supplier Device Package: SC-59-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 10.5 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 755 pF @ 10 V |
auf Bestellung 30000 Stücke: Lieferzeit 10-14 Tag (e) |
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DMN3033LSN-7 | Hersteller : DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 5A; 1.4W; SC59 Mounting: SMD Kind of package: reel; tape Power dissipation: 1.4W Polarisation: unipolar Kind of channel: enhanced Gate-source voltage: ±20V Case: SC59 Drain-source voltage: 30V Drain current: 5A On-state resistance: 40mΩ Type of transistor: N-MOSFET Anzahl je Verpackung: 5 Stücke |
auf Bestellung 1065 Stücke: Lieferzeit 7-14 Tag (e) |
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DMN3033LSN-7 | Hersteller : DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 5A; 1.4W; SC59 Mounting: SMD Kind of package: reel; tape Power dissipation: 1.4W Polarisation: unipolar Kind of channel: enhanced Gate-source voltage: ±20V Case: SC59 Drain-source voltage: 30V Drain current: 5A On-state resistance: 40mΩ Type of transistor: N-MOSFET |
auf Bestellung 1065 Stücke: Lieferzeit 14-21 Tag (e) |
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DMN3033LSN-7 | Hersteller : Diodes Zetex |
Trans MOSFET N-CH 30V 6A 3-Pin SC-59 T/R |
auf Bestellung 2944 Stücke: Lieferzeit 14-21 Tag (e) |
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DMN3033LSN-7 | Hersteller : Diodes Zetex |
Trans MOSFET N-CH 30V 6A 3-Pin SC-59 T/R |
auf Bestellung 2944 Stücke: Lieferzeit 14-21 Tag (e) |
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DMN3033LSN-7 | Hersteller : Diodes Incorporated |
Description: MOSFET N-CH 30V 6A SC59-3 Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 6A (Ta) Rds On (Max) @ Id, Vgs: 30mOhm @ 6A, 10V Power Dissipation (Max): 1.4W (Ta) Vgs(th) (Max) @ Id: 2.1V @ 250µA Supplier Device Package: SC-59-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 10.5 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 755 pF @ 10 V |
auf Bestellung 33117 Stücke: Lieferzeit 10-14 Tag (e) |
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DMN3033LSN-7 | Hersteller : Diodes Incorporated |
MOSFET N-Channel |
auf Bestellung 5481 Stücke: Lieferzeit 10-14 Tag (e) |
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DMN3033LSN-7 | Hersteller : Diodes Inc |
Trans MOSFET N-CH 30V 6A 3-Pin SC-59 T/R |
Produkt ist nicht verfügbar |