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DMN3035LWN-7

DMN3035LWN-7 Diodes Incorporated

DMN3035LWN.pdf Hersteller: Diodes Incorporated
Description: MOSFET 2N-CH 30V 5.5A 8VDFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 770mW
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 5.5A
Input Capacitance (Ciss) (Max) @ Vds: 399pF @ 15V
Rds On (Max) @ Id, Vgs: 35mOhm @ 4.8A, 10V
Gate Charge (Qg) (Max) @ Vgs: 9.9nC @ 10V
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: V-DFN3020-8 (Type N)
Part Status: Active
auf Bestellung 78000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.29 EUR
6000+0.26 EUR
9000+0.25 EUR
15000+0.24 EUR
21000+0.23 EUR
Mindestbestellmenge: 3000
Im Einkaufswagen  Stück im Wert von  UAH
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Technische Details DMN3035LWN-7 Diodes Incorporated

Description: MOSFET 2N-CH 30V 5.5A 8VDFN, Packaging: Tape & Reel (TR), Package / Case: 8-PowerVDFN, Mounting Type: Surface Mount, Configuration: 2 N-Channel (Dual), Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 770mW, Drain to Source Voltage (Vdss): 30V, Current - Continuous Drain (Id) @ 25°C: 5.5A, Input Capacitance (Ciss) (Max) @ Vds: 399pF @ 15V, Rds On (Max) @ Id, Vgs: 35mOhm @ 4.8A, 10V, Gate Charge (Qg) (Max) @ Vgs: 9.9nC @ 10V, Vgs(th) (Max) @ Id: 2V @ 250µA, Supplier Device Package: V-DFN3020-8 (Type N), Part Status: Active.

Weitere Produktangebote DMN3035LWN-7 nach Preis ab 0.26 EUR bis 1.21 EUR

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit
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DMN3035LWN-7 DMN3035LWN-7 Hersteller : Diodes Incorporated DMN3035LWN.pdf MOSFET N-Ch 30V Dual Enh 30Vgss 0.77W 399pF
auf Bestellung 2997 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
4+0.82 EUR
10+0.69 EUR
100+0.48 EUR
500+0.38 EUR
1000+0.31 EUR
3000+0.26 EUR
Mindestbestellmenge: 4
Im Einkaufswagen  Stück im Wert von  UAH
DMN3035LWN-7 DMN3035LWN-7 Hersteller : Diodes Incorporated DMN3035LWN.pdf Description: MOSFET 2N-CH 30V 5.5A 8VDFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 770mW
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 5.5A
Input Capacitance (Ciss) (Max) @ Vds: 399pF @ 15V
Rds On (Max) @ Id, Vgs: 35mOhm @ 4.8A, 10V
Gate Charge (Qg) (Max) @ Vgs: 9.9nC @ 10V
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: V-DFN3020-8 (Type N)
Part Status: Active
auf Bestellung 80638 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
15+1.21 EUR
24+0.76 EUR
100+0.49 EUR
500+0.37 EUR
1000+0.33 EUR
Mindestbestellmenge: 15
Im Einkaufswagen  Stück im Wert von  UAH
DMN3035LWN-7 Hersteller : DIODES INCORPORATED DMN3035LWN.pdf DMN3035LWN-7 SMD N channel transistors
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