DMN3061LCA3-7 DIODES INCORPORATED
Hersteller: DIODES INCORPORATEDCategory: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 3.5A; Idm: 20A; 1.88W
Kind of package: reel; tape
Drain-source voltage: 30V
Drain current: 3.5A
On-state resistance: 0.16Ω
Type of transistor: N-MOSFET
Power dissipation: 1.88W
Polarisation: unipolar
Gate charge: 1.4nC
Kind of channel: enhanced
Gate-source voltage: ±12V
Pulsed drain current: 20A
Mounting: SMD
Case: X4-DSN1006-3
Anzahl je Verpackung: 10000 Stücke
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Technische Details DMN3061LCA3-7 DIODES INCORPORATED
Category: SMD N channel transistors, Description: Transistor: N-MOSFET; unipolar; 30V; 3.5A; Idm: 20A; 1.88W, Kind of package: reel; tape, Drain-source voltage: 30V, Drain current: 3.5A, On-state resistance: 0.16Ω, Type of transistor: N-MOSFET, Power dissipation: 1.88W, Polarisation: unipolar, Gate charge: 1.4nC, Kind of channel: enhanced, Gate-source voltage: ±12V, Pulsed drain current: 20A, Mounting: SMD, Case: X4-DSN1006-3, Anzahl je Verpackung: 10000 Stücke.
Weitere Produktangebote DMN3061LCA3-7
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt |
|---|---|---|---|---|---|
| DMN3061LCA3-7 | Hersteller : Diodes Incorporated |
Description: MOSFET BVDSS: 25V~30V X4-DSN1006 |
Produkt ist nicht verfügbar |
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| DMN3061LCA3-7 | Hersteller : Diodes Incorporated |
MOSFET MOSFET BVDSS: 25V 30V X4-DSN1006-3 T&R 10K |
Produkt ist nicht verfügbar |
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| DMN3061LCA3-7 | Hersteller : DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 3.5A; Idm: 20A; 1.88W Kind of package: reel; tape Drain-source voltage: 30V Drain current: 3.5A On-state resistance: 0.16Ω Type of transistor: N-MOSFET Power dissipation: 1.88W Polarisation: unipolar Gate charge: 1.4nC Kind of channel: enhanced Gate-source voltage: ±12V Pulsed drain current: 20A Mounting: SMD Case: X4-DSN1006-3 |
Produkt ist nicht verfügbar |