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DMN3061LCA3-7 Diodes Incorporated


DMN3061LCA3.pdf Hersteller: Diodes Incorporated
Description: MOSFET BVDSS: 25V~30V X4-DSN1006
Packaging: Tape & Reel (TR)
Package / Case: 3-XFDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.6A (Ta)
Rds On (Max) @ Id, Vgs: 58mOhm @ 500mA, 8V
Power Dissipation (Max): 1.12W
Vgs(th) (Max) @ Id: 1.1V @ 250µA
Supplier Device Package: X4-DSN1006-3 (Type C)
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 8V
Vgs (Max): 12V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 1.4 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 126 pF @ 15 V
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Technische Details DMN3061LCA3-7 Diodes Incorporated

Description: MOSFET BVDSS: 25V~30V X4-DSN1006, Packaging: Tape & Reel (TR), Package / Case: 3-XFDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 4.6A (Ta), Rds On (Max) @ Id, Vgs: 58mOhm @ 500mA, 8V, Power Dissipation (Max): 1.12W, Vgs(th) (Max) @ Id: 1.1V @ 250µA, Supplier Device Package: X4-DSN1006-3 (Type C), Drive Voltage (Max Rds On, Min Rds On): 1.8V, 8V, Vgs (Max): 12V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 1.4 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 126 pF @ 15 V.

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DMN3061LCA3-7 Hersteller : Diodes Incorporated DMN3061LCA3.pdf MOSFETs MOSFET BVDSS: 25V-30V X4-DSN1006-3 T&R 10K
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DMN3061LCA3-7 Hersteller : DIODES INCORPORATED DMN3061LCA3.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 3.5A; Idm: 20A; 1.88W
Case: X4-DSN1006-3
Kind of channel: enhancement
Type of transistor: N-MOSFET
Mounting: SMD
Polarisation: unipolar
Gate charge: 1.4nC
On-state resistance: 0.16Ω
Power dissipation: 1.88W
Drain current: 3.5A
Gate-source voltage: ±12V
Pulsed drain current: 20A
Drain-source voltage: 30V
Kind of package: 7 inch reel; tape
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