DMN3061SVTQ-7 Diodes Incorporated
auf Bestellung 2527 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 5+ | 0.61 EUR |
| 10+ | 0.38 EUR |
| 100+ | 0.2 EUR |
| 500+ | 0.18 EUR |
| 1000+ | 0.16 EUR |
| 6000+ | 0.12 EUR |
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Technische Details DMN3061SVTQ-7 Diodes Incorporated
Description: MOSFET 2N-CH 30V 3.4A TSOT26, Packaging: Bulk, Package / Case: SOT-23-6 Thin, TSOT-23-6, Mounting Type: Surface Mount, Configuration: 2 N-Channel (Dual), Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 880mW (Ta), Drain to Source Voltage (Vdss): 30V, Current - Continuous Drain (Id) @ 25°C: 3.4A (Ta), Input Capacitance (Ciss) (Max) @ Vds: 278pF @ 15V, Rds On (Max) @ Id, Vgs: 60mOhm @ 3.1A, 10V, Gate Charge (Qg) (Max) @ Vgs: 6.6nC @ 10V, Vgs(th) (Max) @ Id: 1.8V @ 250µA, Supplier Device Package: TSOT-26, Grade: Automotive, Qualification: AEC-Q101.
Weitere Produktangebote DMN3061SVTQ-7 nach Preis ab 0.15 EUR bis 0.76 EUR
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DMN3061SVTQ-7 | Hersteller : Diodes Incorporated |
 Description: MOSFET 2N-CH 30V 3.4A TSOT26Packaging: Bulk Package / Case: SOT-23-6 Thin, TSOT-23-6 Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 880mW (Ta) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 3.4A (Ta) Input Capacitance (Ciss) (Max) @ Vds: 278pF @ 15V Rds On (Max) @ Id, Vgs: 60mOhm @ 3.1A, 10V Gate Charge (Qg) (Max) @ Vgs: 6.6nC @ 10V Vgs(th) (Max) @ Id: 1.8V @ 250µA Supplier Device Package: TSOT-26 Grade: Automotive Qualification: AEC-Q101 |
auf Bestellung 32784 Stücke: Lieferzeit 10-14 Tag (e) |
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