Technische Details DMN3061SVTQ-7 Diodes Zetex
Description: MOSFET 2N-CH 30V 3.4A TSOT26, Qualification: AEC-Q101, Grade: Automotive, Supplier Device Package: TSOT-26, Vgs(th) (Max) @ Id: 1.8V @ 250µA, Gate Charge (Qg) (Max) @ Vgs: 6.6nC @ 10V, Rds On (Max) @ Id, Vgs: 60mOhm @ 3.1A, 10V, Input Capacitance (Ciss) (Max) @ Vds: 278pF @ 15V, Current - Continuous Drain (Id) @ 25°C: 3.4A (Ta), Drain to Source Voltage (Vdss): 30V, Power - Max: 880mW (Ta), Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Configuration: 2 N-Channel (Dual), Mounting Type: Surface Mount, Package / Case: SOT-23-6 Thin, TSOT-23-6, Packaging: Bulk.
Weitere Produktangebote DMN3061SVTQ-7 nach Preis ab 0.2 EUR bis 0.99 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde | ||||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 |
DMN3061SVTQ-7 | Diodes Zetex |
 Dual N-Channel Enhancement Mode MOSFET Automotive AEC-Q101 |
auf Bestellung 3000 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||||||
 |
DMN3061SVTQ-7 | Diodes Incorporated |
MOSFETs MOSFET BVDSS: 25V-30V TSOT26 T&R 3K |
auf Bestellung 5420 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||||
 |
DMN3061SVTQ-7 | Diodes Incorporated |
Description: MOSFET 2N-CH 30V 3.4A TSOT26 Qualification: AEC-Q101 Grade: Automotive Supplier Device Package: TSOT-26 Vgs(th) (Max) @ Id: 1.8V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 6.6nC @ 10V Rds On (Max) @ Id, Vgs: 60mOhm @ 3.1A, 10V Input Capacitance (Ciss) (Max) @ Vds: 278pF @ 15V Current - Continuous Drain (Id) @ 25°C: 3.4A (Ta) Drain to Source Voltage (Vdss): 30V Power - Max: 880mW (Ta) Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Configuration: 2 N-Channel (Dual) Mounting Type: Surface Mount Package / Case: SOT-23-6 Thin, TSOT-23-6 Packaging: Bulk |
auf Bestellung 2479 Stücke: Lieferzeit 10-14 Tag (e) |
|
| DMN3061SVTQ-7 |
|
Hersteller: Diodes Zetex
Dual N-Channel Enhancement Mode MOSFET Automotive AEC-Q101
Dual N-Channel Enhancement Mode MOSFET Automotive AEC-Q101
auf Bestellung 3000 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 3000+ | 0.2 EUR |
| DMN3061SVTQ-7 |
|
Hersteller: Diodes Incorporated
MOSFETs MOSFET BVDSS: 25V-30V TSOT26 T&R 3K
MOSFETs MOSFET BVDSS: 25V-30V TSOT26 T&R 3K
auf Bestellung 5420 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 4+ | 0.99 EUR |
| 10+ | 0.44 EUR |
| 100+ | 0.39 EUR |
| 500+ | 0.38 EUR |
| 1000+ | 0.32 EUR |
| 3000+ | 0.27 EUR |
| 6000+ | 0.24 EUR |
| DMN3061SVTQ-7 |
|
Hersteller: Diodes Incorporated
Description: MOSFET 2N-CH 30V 3.4A TSOT26
Qualification: AEC-Q101
Grade: Automotive
Supplier Device Package: TSOT-26
Vgs(th) (Max) @ Id: 1.8V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 6.6nC @ 10V
Rds On (Max) @ Id, Vgs: 60mOhm @ 3.1A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 278pF @ 15V
Current - Continuous Drain (Id) @ 25°C: 3.4A (Ta)
Drain to Source Voltage (Vdss): 30V
Power - Max: 880mW (Ta)
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: SOT-23-6 Thin, TSOT-23-6
Packaging: Bulk
Description: MOSFET 2N-CH 30V 3.4A TSOT26
Qualification: AEC-Q101
Grade: Automotive
Supplier Device Package: TSOT-26
Vgs(th) (Max) @ Id: 1.8V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 6.6nC @ 10V
Rds On (Max) @ Id, Vgs: 60mOhm @ 3.1A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 278pF @ 15V
Current - Continuous Drain (Id) @ 25°C: 3.4A (Ta)
Drain to Source Voltage (Vdss): 30V
Power - Max: 880mW (Ta)
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: SOT-23-6 Thin, TSOT-23-6
Packaging: Bulk
auf Bestellung 2479 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 22+ | 0.99 EUR |
| 35+ | 0.61 EUR |
| 42+ | 0.51 EUR |
| 50+ | 0.44 EUR |
| 100+ | 0.39 EUR |