DMN3061SVTQ-7 Diodes Incorporated
Hersteller: Diodes IncorporatedDescription: MOSFET 2N-CH 30V 3.4A TSOT26
Packaging: Bulk
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 880mW (Ta)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 3.4A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 278pF @ 15V
Rds On (Max) @ Id, Vgs: 60mOhm @ 3.1A, 10V
Gate Charge (Qg) (Max) @ Vgs: 6.6nC @ 10V
Vgs(th) (Max) @ Id: 1.8V @ 250µA
Supplier Device Package: TSOT-26
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 32784 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 24+ | 0.76 EUR |
| 33+ | 0.55 EUR |
| 100+ | 0.28 EUR |
| 500+ | 0.24 EUR |
| 1000+ | 0.19 EUR |
| 3000+ | 0.17 EUR |
| 12000+ | 0.15 EUR |
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Technische Details DMN3061SVTQ-7 Diodes Incorporated
Description: MOSFET 2N-CH 30V 3.4A TSOT26, Packaging: Bulk, Package / Case: SOT-23-6 Thin, TSOT-23-6, Mounting Type: Surface Mount, Configuration: 2 N-Channel (Dual), Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 880mW (Ta), Drain to Source Voltage (Vdss): 30V, Current - Continuous Drain (Id) @ 25°C: 3.4A (Ta), Input Capacitance (Ciss) (Max) @ Vds: 278pF @ 15V, Rds On (Max) @ Id, Vgs: 60mOhm @ 3.1A, 10V, Gate Charge (Qg) (Max) @ Vgs: 6.6nC @ 10V, Vgs(th) (Max) @ Id: 1.8V @ 250µA, Supplier Device Package: TSOT-26, Grade: Automotive, Qualification: AEC-Q101.
Weitere Produktangebote DMN3061SVTQ-7 nach Preis ab 0.12 EUR bis 0.56 EUR
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| DMN3061SVTQ-7 | Hersteller : Diodes Incorporated |
MOSFETs MOSFET BVDSS: 25V-30V TSOT26 T&R 3K |
auf Bestellung 1472 Stücke: Lieferzeit 10-14 Tag (e) |
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