DMN3071LVT-13 Diodes Incorporated
Hersteller: Diodes Incorporated
Description: MOSFET 2N-CH 30V 4A TSOT26
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Configuration: 2 N-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 700mW
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 4A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 190pF @ 15V
Rds On (Max) @ Id, Vgs: 50mOhm @ 3.5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 4.5nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TSOT-26
Description: MOSFET 2N-CH 30V 4A TSOT26
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Configuration: 2 N-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 700mW
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 4A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 190pF @ 15V
Rds On (Max) @ Id, Vgs: 50mOhm @ 3.5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 4.5nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TSOT-26
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Technische Details DMN3071LVT-13 Diodes Incorporated
Description: MOSFET 2N-CH 30V 4A TSOT26, Packaging: Tape & Reel (TR), Package / Case: SOT-23-6 Thin, TSOT-23-6, Mounting Type: Surface Mount, Configuration: 2 N-Channel, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 700mW, Drain to Source Voltage (Vdss): 30V, Current - Continuous Drain (Id) @ 25°C: 4A (Ta), Input Capacitance (Ciss) (Max) @ Vds: 190pF @ 15V, Rds On (Max) @ Id, Vgs: 50mOhm @ 3.5A, 10V, Gate Charge (Qg) (Max) @ Vgs: 4.5nC @ 10V, Vgs(th) (Max) @ Id: 2.5V @ 250µA, Supplier Device Package: TSOT-26.
Weitere Produktangebote DMN3071LVT-13
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis |
|---|---|---|---|---|---|
| DMN3071LVT-13 | Hersteller : Diodes Incorporated |
 MOSFETs MOSFET BVDSS: 25V-30V TSOT26 T&R 10K |
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