Technische Details DMN3115UDMQ-13 Diodes Inc
Category: SMD N channel transistors, Description: Transistor: N-MOSFET; unipolar; 30V; 3.2A; Idm: 12.8A; 900mW; SOT26, Mounting: SMD, Kind of package: reel; tape, On-state resistance: 0.13Ω, Type of transistor: N-MOSFET, Power dissipation: 0.9W, Polarisation: unipolar, Case: SOT26, Kind of channel: enhanced, Gate-source voltage: ±8V, Pulsed drain current: 12.8A, Drain-source voltage: 30V, Drain current: 3.2A, Anzahl je Verpackung: 10000 Stücke.
Weitere Produktangebote DMN3115UDMQ-13
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt |
|---|---|---|---|---|---|
 |
DMN3115UDMQ-13 | Hersteller : DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 3.2A; Idm: 12.8A; 900mW; SOT26 Mounting: SMD Kind of package: reel; tape On-state resistance: 0.13Ω Type of transistor: N-MOSFET Power dissipation: 0.9W Polarisation: unipolar Case: SOT26 Kind of channel: enhanced Gate-source voltage: ±8V Pulsed drain current: 12.8A Drain-source voltage: 30V Drain current: 3.2A Anzahl je Verpackung: 10000 Stücke |
Produkt ist nicht verfügbar |
|
| DMN3115UDMQ-13 | Hersteller : Diodes Incorporated |
 MOSFET MOSFET BVDSS: 25V~30V SOT26 T&R 10K |
Produkt ist nicht verfügbar |
||
|
|
DMN3115UDMQ-13 | Hersteller : DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 3.2A; Idm: 12.8A; 900mW; SOT26 Mounting: SMD Kind of package: reel; tape On-state resistance: 0.13Ω Type of transistor: N-MOSFET Power dissipation: 0.9W Polarisation: unipolar Case: SOT26 Kind of channel: enhanced Gate-source voltage: ±8V Pulsed drain current: 12.8A Drain-source voltage: 30V Drain current: 3.2A |
Produkt ist nicht verfügbar |