DMN32D0LV-7 Diodes Incorporated
Hersteller: Diodes Incorporated
Description: MOSFET 2N-CH 30V 0.68A SOT563
Packaging: Tape & Reel (TR)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 480mW (Ta)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 680mA (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 44.8pF @ 15V
Rds On (Max) @ Id, Vgs: 1.2Ohm @ 100mA, 4V
Gate Charge (Qg) (Max) @ Vgs: 0.62nC @ 4.5V
Vgs(th) (Max) @ Id: 1.2V @ 250µA
Supplier Device Package: SOT-563
| Anzahl | Preis |
|---|---|
| 3000+ | 0.073 EUR |
| 6000+ | 0.066 EUR |
| 9000+ | 0.063 EUR |
| 15000+ | 0.059 EUR |
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Technische Details DMN32D0LV-7 Diodes Incorporated
Description: MOSFET 2N-CH 30V 0.68A SOT563, Packaging: Tape & Reel (TR), Package / Case: SOT-563, SOT-666, Mounting Type: Surface Mount, Configuration: 2 N-Channel (Dual), Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 480mW (Ta), Drain to Source Voltage (Vdss): 30V, Current - Continuous Drain (Id) @ 25°C: 680mA (Ta), Input Capacitance (Ciss) (Max) @ Vds: 44.8pF @ 15V, Rds On (Max) @ Id, Vgs: 1.2Ohm @ 100mA, 4V, Gate Charge (Qg) (Max) @ Vgs: 0.62nC @ 4.5V, Vgs(th) (Max) @ Id: 1.2V @ 250µA, Supplier Device Package: SOT-563.
Weitere Produktangebote DMN32D0LV-7 nach Preis ab 0.058 EUR bis 0.49 EUR
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DMN32D0LV-7 | Diodes Incorporated |
Description: MOSFET 2N-CH 30V 0.68A SOT563 Packaging: Cut Tape (CT) Package / Case: SOT-563, SOT-666 Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 480mW (Ta) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 680mA (Ta) Input Capacitance (Ciss) (Max) @ Vds: 44.8pF @ 15V Rds On (Max) @ Id, Vgs: 1.2Ohm @ 100mA, 4V Gate Charge (Qg) (Max) @ Vgs: 0.62nC @ 4.5V Vgs(th) (Max) @ Id: 1.2V @ 250µA Supplier Device Package: SOT-563 |
auf Bestellung 15946 Stücke: Lieferzeit 10-14 Tag (e) |
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| DMN32D0LV-7 | Diodes Incorporated |
MOSFET MOSFET BVDSS: 25V-30V SOT563 T&R 3K |
auf Bestellung 1819 Stücke: Lieferzeit 10-14 Tag (e) |
|
| DMN32D0LV-7 |
|
Hersteller: Diodes Incorporated
Description: MOSFET 2N-CH 30V 0.68A SOT563
Packaging: Cut Tape (CT)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 480mW (Ta)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 680mA (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 44.8pF @ 15V
Rds On (Max) @ Id, Vgs: 1.2Ohm @ 100mA, 4V
Gate Charge (Qg) (Max) @ Vgs: 0.62nC @ 4.5V
Vgs(th) (Max) @ Id: 1.2V @ 250µA
Supplier Device Package: SOT-563
Description: MOSFET 2N-CH 30V 0.68A SOT563
Packaging: Cut Tape (CT)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 480mW (Ta)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 680mA (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 44.8pF @ 15V
Rds On (Max) @ Id, Vgs: 1.2Ohm @ 100mA, 4V
Gate Charge (Qg) (Max) @ Vgs: 0.62nC @ 4.5V
Vgs(th) (Max) @ Id: 1.2V @ 250µA
Supplier Device Package: SOT-563
auf Bestellung 15946 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 67+ | 0.26 EUR |
| 94+ | 0.19 EUR |
| 140+ | 0.13 EUR |
| 500+ | 0.096 EUR |
| 1000+ | 0.086 EUR |
| DMN32D0LV-7 |
|
Hersteller: Diodes Incorporated
MOSFET MOSFET BVDSS: 25V-30V SOT563 T&R 3K
MOSFET MOSFET BVDSS: 25V-30V SOT563 T&R 3K
auf Bestellung 1819 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 6+ | 0.49 EUR |
| 10+ | 0.34 EUR |
| 100+ | 0.22 EUR |
| 1000+ | 0.097 EUR |
| 3000+ | 0.083 EUR |
| 9000+ | 0.063 EUR |
| 24000+ | 0.058 EUR |