| Anzahl | Privatkunde |
|---|---|
| 3000+ | 0.13 EUR |
| 6000+ | 0.12 EUR |
| 9000+ | 0.11 EUR |
Artikel auf Bestellung
Nicht an unserem Lager — wir beziehen ihn nach Ihrer Bestellung vom Lieferantenlager.
Lieferzeit:
14-21 Tag (e)
Mindestmenge:
3000 Stücke
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Technische Details DMN32D2LDF-7 Diodes Zetex
Description: DIODES INC. - DMN32D2LDF-7 - Dual-MOSFET, n-Kanal, 30 V, 30 V, 400 mA, 400 mA, 1.2 ohm, tariffCode: 85412900, Drain-Source-Spannung Vds: 30V, rohsCompliant: YES, Dauer-Drainstrom Id: 400mA, Dauer-Drainstrom Id, p-Kanal: 400mA, hazardous: false, rohsPhthalatesCompliant: YES, Qualifikation: AEC-Q101, isCanonical: N, Drain-Source-Spannung Vds, p-Kanal: 30V, MSL: -, usEccn: EAR99, Dauer-Drainstrom Id, n-Kanal: 400mA, Drain-Source-Durchgangswiderstand, p-Kanal: 1.2ohm, Verlustleistung, p-Kanal: 280mW, Drain-Source-Spannung Vds, n-Kanal: 30V, euEccn: NLR, Bauform - Transistor: SOT-353, Anzahl der Pins: 5Pin(s), Produktpalette: -, Drain-Source-Durchgangswiderstand, n-Kanal: 1.2ohm, productTraceability: No, Kanaltyp: n-Kanal, Verlustleistung, n-Kanal: 280mW, Betriebstemperatur, max.: 150°C, SVHC: No SVHC (25-Jun-2025).
Weitere Produktangebote DMN32D2LDF-7 nach Preis ab 0.079 EUR bis 1.19 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde | ||||||||||||||||
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DMN32D2LDF-7 | Diodes Zetex |
 Trans MOSFET N-CH 30V 0.4A 5-Pin SOT-353 T/R |
auf Bestellung 9000 Stücke: Lieferzeit 14-21 Tag (e) |
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DMN32D2LDF-7 | Diodes Incorporated |
Description: MOSFET 2N-CH 30V 0.4A SOT353 Packaging: Tape & Reel (TR) Package / Case: 5-TSSOP, SC-70-5, SOT-353 Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Common Source Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 280mW Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 400mA Input Capacitance (Ciss) (Max) @ Vds: 39pF @ 3V Rds On (Max) @ Id, Vgs: 1.2Ohm @ 100mA, 4V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 1.2V @ 250µA Supplier Device Package: SOT-353 |
auf Bestellung 18000 Stücke: Lieferzeit 10-14 Tag (e) |
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DMN32D2LDF-7 | Diodes Zetex |
Trans MOSFET N-CH 30V 0.4A 5-Pin SOT-353 T/R |
auf Bestellung 3154 Stücke: Lieferzeit 14-21 Tag (e) |
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DMN32D2LDF-7 | Diodes Zetex |
Trans MOSFET N-CH 30V 0.4A 5-Pin SOT-353 T/R |
auf Bestellung 3154 Stücke: Lieferzeit 14-21 Tag (e) |
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DMN32D2LDF-7 | Diodes Incorporated |
MOSFETs 350mw 30V DUAL |
auf Bestellung 14100 Stücke: Lieferzeit 10-14 Tag (e) |
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DMN32D2LDF-7 | Diodes Incorporated |
Description: MOSFET 2N-CH 30V 0.4A SOT353 Packaging: Cut Tape (CT) Package / Case: 5-TSSOP, SC-70-5, SOT-353 Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Common Source Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 280mW Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 400mA Input Capacitance (Ciss) (Max) @ Vds: 39pF @ 3V Rds On (Max) @ Id, Vgs: 1.2Ohm @ 100mA, 4V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 1.2V @ 250µA Supplier Device Package: SOT-353 |
auf Bestellung 19952 Stücke: Lieferzeit 10-14 Tag (e) |
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DMN32D2LDF-7 | DIODES INC. |
Description: DIODES INC. - DMN32D2LDF-7 - Dual-MOSFET, n-Kanal, 30 V, 30 V, 400 mA, 400 mA, 1.2 ohm tariffCode: 85412900 Drain-Source-Spannung Vds: 30V rohsCompliant: YES Dauer-Drainstrom Id: 400mA Dauer-Drainstrom Id, p-Kanal: 400mA hazardous: false rohsPhthalatesCompliant: YES Qualifikation: AEC-Q101 isCanonical: N Drain-Source-Spannung Vds, p-Kanal: 30V MSL: - usEccn: EAR99 Dauer-Drainstrom Id, n-Kanal: 400mA Drain-Source-Durchgangswiderstand, p-Kanal: 1.2ohm Verlustleistung, p-Kanal: 280mW Drain-Source-Spannung Vds, n-Kanal: 30V euEccn: NLR Bauform - Transistor: SOT-353 Anzahl der Pins: 5Pin(s) Produktpalette: - Drain-Source-Durchgangswiderstand, n-Kanal: 1.2ohm productTraceability: No Kanaltyp: n-Kanal Verlustleistung, n-Kanal: 280mW Betriebstemperatur, max.: 150°C SVHC: No SVHC (25-Jun-2025) |
auf Bestellung 3369 Stücke: Lieferzeit 14-21 Tag (e) |
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DMN32D2LDF-7 | DIODES INC. |
Description: DIODES INC. - DMN32D2LDF-7 - Dual-MOSFET, n-Kanal, 30 V, 30 V, 400 mA, 400 mA, 1.2 ohm tariffCode: 85412900 euEccn: NLR rohsCompliant: YES Dauer-Drainstrom Id, p-Kanal: 400mA hazardous: false rohsPhthalatesCompliant: YES Qualifikation: AEC-Q101 isCanonical: Y Drain-Source-Spannung Vds, p-Kanal: 30V MSL: - Dauer-Drainstrom Id, n-Kanal: 400mA Drain-Source-Durchgangswiderstand, p-Kanal: 1.2ohm Verlustleistung, p-Kanal: 280mW Drain-Source-Spannung Vds, n-Kanal: 30V SVHC: No SVHC (04-Feb-2026) Bauform - Transistor: SOT-353 Anzahl der Pins: 5Pin(s) Produktpalette: - Drain-Source-Durchgangswiderstand, n-Kanal: 1.2ohm productTraceability: Yes-Date/Lot Code usEccn: EAR99 Kanaltyp: n-Kanal Verlustleistung, n-Kanal: 280mW Betriebstemperatur, max.: 150°C |
auf Bestellung 1759 Stücke: Lieferzeit 14-21 Tag (e) |
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DMN32D2LDF-7 | DIODES INCORPORATED |
Category: Multi channel transistors Description: Transistor: N-MOSFET x2; unipolar; 30V; 400mA; 280mW; SOT353; ESD Mounting: SMD Case: SOT353 Power dissipation: 0.28W Polarisation: unipolar Version: ESD Drain current: 0.4A Kind of channel: enhancement Drain-source voltage: 30V Type of transistor: N-MOSFET x2 Gate-source voltage: ±10V Kind of package: 7 inch reel; tape Semiconductor structure: common source On-state resistance: 2.2Ω |
auf Bestellung 1296 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
| DMN32D2LDF-7 |
|
Hersteller: Diodes Zetex
Trans MOSFET N-CH 30V 0.4A 5-Pin SOT-353 T/R
Trans MOSFET N-CH 30V 0.4A 5-Pin SOT-353 T/R
auf Bestellung 9000 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 3000+ | 0.13 EUR |
| 6000+ | 0.12 EUR |
| 9000+ | 0.11 EUR |
| DMN32D2LDF-7 |
|
Hersteller: Diodes Incorporated
Description: MOSFET 2N-CH 30V 0.4A SOT353
Packaging: Tape & Reel (TR)
Package / Case: 5-TSSOP, SC-70-5, SOT-353
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual) Common Source
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 280mW
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 400mA
Input Capacitance (Ciss) (Max) @ Vds: 39pF @ 3V
Rds On (Max) @ Id, Vgs: 1.2Ohm @ 100mA, 4V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1.2V @ 250µA
Supplier Device Package: SOT-353
Description: MOSFET 2N-CH 30V 0.4A SOT353
Packaging: Tape & Reel (TR)
Package / Case: 5-TSSOP, SC-70-5, SOT-353
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual) Common Source
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 280mW
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 400mA
Input Capacitance (Ciss) (Max) @ Vds: 39pF @ 3V
Rds On (Max) @ Id, Vgs: 1.2Ohm @ 100mA, 4V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1.2V @ 250µA
Supplier Device Package: SOT-353
auf Bestellung 18000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 3000+ | 0.19 EUR |
| 9000+ | 0.17 EUR |
| DMN32D2LDF-7 |
|
Hersteller: Diodes Zetex
Trans MOSFET N-CH 30V 0.4A 5-Pin SOT-353 T/R
Trans MOSFET N-CH 30V 0.4A 5-Pin SOT-353 T/R
auf Bestellung 3154 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 901+ | 0.2 EUR |
| 1014+ | 0.18 EUR |
| 1024+ | 0.17 EUR |
| 1257+ | 0.13 EUR |
| 3000+ | 0.094 EUR |
| DMN32D2LDF-7 |
|
Hersteller: Diodes Zetex
Trans MOSFET N-CH 30V 0.4A 5-Pin SOT-353 T/R
Trans MOSFET N-CH 30V 0.4A 5-Pin SOT-353 T/R
auf Bestellung 3154 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 375+ | 0.48 EUR |
| 508+ | 0.33 EUR |
| 551+ | 0.3 EUR |
| 901+ | 0.18 EUR |
| 1014+ | 0.15 EUR |
| 1024+ | 0.14 EUR |
| 1257+ | 0.11 EUR |
| 3000+ | 0.079 EUR |
| DMN32D2LDF-7 |
|
Hersteller: Diodes Incorporated
MOSFETs 350mw 30V DUAL
MOSFETs 350mw 30V DUAL
auf Bestellung 14100 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 4+ | 0.75 EUR |
| 10+ | 0.43 EUR |
| 100+ | 0.29 EUR |
| 500+ | 0.23 EUR |
| 1000+ | 0.18 EUR |
| 3000+ | 0.14 EUR |
| 6000+ | 0.13 EUR |
| DMN32D2LDF-7 |
|
Hersteller: Diodes Incorporated
Description: MOSFET 2N-CH 30V 0.4A SOT353
Packaging: Cut Tape (CT)
Package / Case: 5-TSSOP, SC-70-5, SOT-353
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual) Common Source
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 280mW
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 400mA
Input Capacitance (Ciss) (Max) @ Vds: 39pF @ 3V
Rds On (Max) @ Id, Vgs: 1.2Ohm @ 100mA, 4V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1.2V @ 250µA
Supplier Device Package: SOT-353
Description: MOSFET 2N-CH 30V 0.4A SOT353
Packaging: Cut Tape (CT)
Package / Case: 5-TSSOP, SC-70-5, SOT-353
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual) Common Source
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 280mW
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 400mA
Input Capacitance (Ciss) (Max) @ Vds: 39pF @ 3V
Rds On (Max) @ Id, Vgs: 1.2Ohm @ 100mA, 4V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1.2V @ 250µA
Supplier Device Package: SOT-353
auf Bestellung 19952 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 25+ | 0.86 EUR |
| 40+ | 0.54 EUR |
| 48+ | 0.44 EUR |
| 55+ | 0.38 EUR |
| 100+ | 0.33 EUR |
| DMN32D2LDF-7 |
|
Hersteller: DIODES INC.
Description: DIODES INC. - DMN32D2LDF-7 - Dual-MOSFET, n-Kanal, 30 V, 30 V, 400 mA, 400 mA, 1.2 ohm
tariffCode: 85412900
Drain-Source-Spannung Vds: 30V
rohsCompliant: YES
Dauer-Drainstrom Id: 400mA
Dauer-Drainstrom Id, p-Kanal: 400mA
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: AEC-Q101
isCanonical: N
Drain-Source-Spannung Vds, p-Kanal: 30V
MSL: -
usEccn: EAR99
Dauer-Drainstrom Id, n-Kanal: 400mA
Drain-Source-Durchgangswiderstand, p-Kanal: 1.2ohm
Verlustleistung, p-Kanal: 280mW
Drain-Source-Spannung Vds, n-Kanal: 30V
euEccn: NLR
Bauform - Transistor: SOT-353
Anzahl der Pins: 5Pin(s)
Produktpalette: -
Drain-Source-Durchgangswiderstand, n-Kanal: 1.2ohm
productTraceability: No
Kanaltyp: n-Kanal
Verlustleistung, n-Kanal: 280mW
Betriebstemperatur, max.: 150°C
SVHC: No SVHC (25-Jun-2025)
Description: DIODES INC. - DMN32D2LDF-7 - Dual-MOSFET, n-Kanal, 30 V, 30 V, 400 mA, 400 mA, 1.2 ohm
tariffCode: 85412900
Drain-Source-Spannung Vds: 30V
rohsCompliant: YES
Dauer-Drainstrom Id: 400mA
Dauer-Drainstrom Id, p-Kanal: 400mA
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: AEC-Q101
isCanonical: N
Drain-Source-Spannung Vds, p-Kanal: 30V
MSL: -
usEccn: EAR99
Dauer-Drainstrom Id, n-Kanal: 400mA
Drain-Source-Durchgangswiderstand, p-Kanal: 1.2ohm
Verlustleistung, p-Kanal: 280mW
Drain-Source-Spannung Vds, n-Kanal: 30V
euEccn: NLR
Bauform - Transistor: SOT-353
Anzahl der Pins: 5Pin(s)
Produktpalette: -
Drain-Source-Durchgangswiderstand, n-Kanal: 1.2ohm
productTraceability: No
Kanaltyp: n-Kanal
Verlustleistung, n-Kanal: 280mW
Betriebstemperatur, max.: 150°C
SVHC: No SVHC (25-Jun-2025)
auf Bestellung 3369 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 255+ | 0.99 EUR |
| 415+ | 0.56 EUR |
| 654+ | 0.33 EUR |
| 878+ | 0.25 EUR |
| 1500+ | 0.21 EUR |
| DMN32D2LDF-7 |
|
Hersteller: DIODES INC.
Description: DIODES INC. - DMN32D2LDF-7 - Dual-MOSFET, n-Kanal, 30 V, 30 V, 400 mA, 400 mA, 1.2 ohm
tariffCode: 85412900
euEccn: NLR
rohsCompliant: YES
Dauer-Drainstrom Id, p-Kanal: 400mA
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: AEC-Q101
isCanonical: Y
Drain-Source-Spannung Vds, p-Kanal: 30V
MSL: -
Dauer-Drainstrom Id, n-Kanal: 400mA
Drain-Source-Durchgangswiderstand, p-Kanal: 1.2ohm
Verlustleistung, p-Kanal: 280mW
Drain-Source-Spannung Vds, n-Kanal: 30V
SVHC: No SVHC (04-Feb-2026)
Bauform - Transistor: SOT-353
Anzahl der Pins: 5Pin(s)
Produktpalette: -
Drain-Source-Durchgangswiderstand, n-Kanal: 1.2ohm
productTraceability: Yes-Date/Lot Code
usEccn: EAR99
Kanaltyp: n-Kanal
Verlustleistung, n-Kanal: 280mW
Betriebstemperatur, max.: 150°C
Description: DIODES INC. - DMN32D2LDF-7 - Dual-MOSFET, n-Kanal, 30 V, 30 V, 400 mA, 400 mA, 1.2 ohm
tariffCode: 85412900
euEccn: NLR
rohsCompliant: YES
Dauer-Drainstrom Id, p-Kanal: 400mA
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: AEC-Q101
isCanonical: Y
Drain-Source-Spannung Vds, p-Kanal: 30V
MSL: -
Dauer-Drainstrom Id, n-Kanal: 400mA
Drain-Source-Durchgangswiderstand, p-Kanal: 1.2ohm
Verlustleistung, p-Kanal: 280mW
Drain-Source-Spannung Vds, n-Kanal: 30V
SVHC: No SVHC (04-Feb-2026)
Bauform - Transistor: SOT-353
Anzahl der Pins: 5Pin(s)
Produktpalette: -
Drain-Source-Durchgangswiderstand, n-Kanal: 1.2ohm
productTraceability: Yes-Date/Lot Code
usEccn: EAR99
Kanaltyp: n-Kanal
Verlustleistung, n-Kanal: 280mW
Betriebstemperatur, max.: 150°C
auf Bestellung 1759 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 210+ | 1.19 EUR |
| 472+ | 0.49 EUR |
| 541+ | 0.39 EUR |
| 607+ | 0.36 EUR |
| 1500+ | 0.31 EUR |
| DMN32D2LDF-7 |
|
Hersteller: DIODES INCORPORATED
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 30V; 400mA; 280mW; SOT353; ESD
Mounting: SMD
Case: SOT353
Power dissipation: 0.28W
Polarisation: unipolar
Version: ESD
Drain current: 0.4A
Kind of channel: enhancement
Drain-source voltage: 30V
Type of transistor: N-MOSFET x2
Gate-source voltage: ±10V
Kind of package: 7 inch reel; tape
Semiconductor structure: common source
On-state resistance: 2.2Ω
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 30V; 400mA; 280mW; SOT353; ESD
Mounting: SMD
Case: SOT353
Power dissipation: 0.28W
Polarisation: unipolar
Version: ESD
Drain current: 0.4A
Kind of channel: enhancement
Drain-source voltage: 30V
Type of transistor: N-MOSFET x2
Gate-source voltage: ±10V
Kind of package: 7 inch reel; tape
Semiconductor structure: common source
On-state resistance: 2.2Ω
auf Bestellung 1296 Stücke:
Lieferzeit 14-21 Tag (e)