DMN3401LVQ-7 Diodes Incorporated
Hersteller: Diodes Incorporated
Description: MOSFET 2N-CH 30V 0.8A SOT563
Qualification: AEC-Q101
Grade: Automotive
Part Status: Active
Supplier Device Package: SOT-563
Vgs(th) (Max) @ Id: 1.6V @ 100µA
Gate Charge (Qg) (Max) @ Vgs: 1.2nC @ 10V
Rds On (Max) @ Id, Vgs: 400mOhm @ 590mA, 10V
Input Capacitance (Ciss) (Max) @ Vds: 50pF @ 15V
Current - Continuous Drain (Id) @ 25°C: 800mA (Ta)
Drain to Source Voltage (Vdss): 30V
Power - Max: 490mW (Ta)
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: SOT-563, SOT-666
Packaging: Tape & Reel (TR)
| Anzahl | Preis |
|---|---|
| 3000+ | 0.093 EUR |
| 6000+ | 0.084 EUR |
| 9000+ | 0.079 EUR |
| 15000+ | 0.074 EUR |
| 21000+ | 0.07 EUR |
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Technische Details DMN3401LVQ-7 Diodes Incorporated
Description: MOSFET 2N-CH 30V 0.8A SOT563, Qualification: AEC-Q101, Grade: Automotive, Part Status: Active, Supplier Device Package: SOT-563, Vgs(th) (Max) @ Id: 1.6V @ 100µA, Gate Charge (Qg) (Max) @ Vgs: 1.2nC @ 10V, Rds On (Max) @ Id, Vgs: 400mOhm @ 590mA, 10V, Input Capacitance (Ciss) (Max) @ Vds: 50pF @ 15V, Current - Continuous Drain (Id) @ 25°C: 800mA (Ta), Drain to Source Voltage (Vdss): 30V, Power - Max: 490mW (Ta), Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Configuration: 2 N-Channel (Dual), Mounting Type: Surface Mount, Package / Case: SOT-563, SOT-666, Packaging: Tape & Reel (TR).
Weitere Produktangebote DMN3401LVQ-7 nach Preis ab 0.11 EUR bis 0.46 EUR
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DMN3401LVQ-7 | Diodes Incorporated |
Description: MOSFET 2N-CH 30V 0.8A SOT563 Qualification: AEC-Q101 Grade: Automotive Part Status: Active Supplier Device Package: SOT-563 Vgs(th) (Max) @ Id: 1.6V @ 100µA Gate Charge (Qg) (Max) @ Vgs: 1.2nC @ 10V Rds On (Max) @ Id, Vgs: 400mOhm @ 590mA, 10V Input Capacitance (Ciss) (Max) @ Vds: 50pF @ 15V Current - Continuous Drain (Id) @ 25°C: 800mA (Ta) Drain to Source Voltage (Vdss): 30V Power - Max: 490mW (Ta) Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Configuration: 2 N-Channel (Dual) Mounting Type: Surface Mount Package / Case: SOT-563, SOT-666 Packaging: Cut Tape (CT) |
auf Bestellung 29975 Stücke: Lieferzeit 10-14 Tag (e) |
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| DMN3401LVQ-7 |
|
Hersteller: Diodes Incorporated
Description: MOSFET 2N-CH 30V 0.8A SOT563
Qualification: AEC-Q101
Grade: Automotive
Part Status: Active
Supplier Device Package: SOT-563
Vgs(th) (Max) @ Id: 1.6V @ 100µA
Gate Charge (Qg) (Max) @ Vgs: 1.2nC @ 10V
Rds On (Max) @ Id, Vgs: 400mOhm @ 590mA, 10V
Input Capacitance (Ciss) (Max) @ Vds: 50pF @ 15V
Current - Continuous Drain (Id) @ 25°C: 800mA (Ta)
Drain to Source Voltage (Vdss): 30V
Power - Max: 490mW (Ta)
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: SOT-563, SOT-666
Packaging: Cut Tape (CT)
Description: MOSFET 2N-CH 30V 0.8A SOT563
Qualification: AEC-Q101
Grade: Automotive
Part Status: Active
Supplier Device Package: SOT-563
Vgs(th) (Max) @ Id: 1.6V @ 100µA
Gate Charge (Qg) (Max) @ Vgs: 1.2nC @ 10V
Rds On (Max) @ Id, Vgs: 400mOhm @ 590mA, 10V
Input Capacitance (Ciss) (Max) @ Vds: 50pF @ 15V
Current - Continuous Drain (Id) @ 25°C: 800mA (Ta)
Drain to Source Voltage (Vdss): 30V
Power - Max: 490mW (Ta)
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: SOT-563, SOT-666
Packaging: Cut Tape (CT)
auf Bestellung 29975 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 39+ | 0.46 EUR |
| 63+ | 0.28 EUR |
| 101+ | 0.18 EUR |
| 500+ | 0.13 EUR |
| 1000+ | 0.11 EUR |