DMN3732UFB4-7B Diodes Incorporated
Hersteller: Diodes IncorporatedDescription: MOSFET BVDSS: 25V~30V X2-DFN1006
Packaging: Cut Tape (CT)
Package / Case: 3-XFDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.3A (Ta)
Rds On (Max) @ Id, Vgs: 460mOhm @ 200mA, 4.5V
Power Dissipation (Max): 490mW (Ta)
Vgs(th) (Max) @ Id: 950mV @ 250µA
Supplier Device Package: X2-DFN1006-3
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 0.9 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 40.8 pF @ 25 V
auf Bestellung 7777 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 38+ | 0.48 EUR |
| 55+ | 0.32 EUR |
| 112+ | 0.16 EUR |
| 500+ | 0.13 EUR |
| 1000+ | 0.09 EUR |
| 2000+ | 0.08 EUR |
| 5000+ | 0.07 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details DMN3732UFB4-7B Diodes Incorporated
Description: MOSFET BVDSS: 25V~30V X2-DFN1006, Packaging: Tape & Reel (TR), Package / Case: 3-XFDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 1.3A (Ta), Rds On (Max) @ Id, Vgs: 460mOhm @ 200mA, 4.5V, Power Dissipation (Max): 490mW (Ta), Vgs(th) (Max) @ Id: 950mV @ 250µA, Supplier Device Package: X2-DFN1006-3, Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V, Vgs (Max): ±8V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 0.9 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 40.8 pF @ 25 V.
Weitere Produktangebote DMN3732UFB4-7B
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis |
|---|---|---|---|---|---|
| DMN3732UFB4-7B | Hersteller : Diodes Zetex |
30V N-Channel Enhancement Mode MOSFET |
Produkt ist nicht verfügbar |
||
|
|
DMN3732UFB4-7B | Hersteller : Diodes Incorporated |
Description: MOSFET BVDSS: 25V~30V X2-DFN1006 Packaging: Tape & Reel (TR) Package / Case: 3-XFDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 1.3A (Ta) Rds On (Max) @ Id, Vgs: 460mOhm @ 200mA, 4.5V Power Dissipation (Max): 490mW (Ta) Vgs(th) (Max) @ Id: 950mV @ 250µA Supplier Device Package: X2-DFN1006-3 Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs (Max): ±8V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 0.9 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 40.8 pF @ 25 V |
Produkt ist nicht verfügbar |
|
| DMN3732UFB4-7B | Hersteller : Diodes Incorporated |
MOSFET MOSFET BVDSS: 25V-30V X2-DFN1006-3 T&R 10K |
Produkt ist nicht verfügbar |