DMN4008LFG-13 Diodes Incorporated
Hersteller: Diodes IncorporatedDescription: MOSFET N-CH 40V 14.4A PWRDI3333
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14.4A (Ta)
Rds On (Max) @ Id, Vgs: 7.5mOhm @ 10A, 10V
Power Dissipation (Max): 1W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: PowerDI3333-8
Drive Voltage (Max Rds On, Min Rds On): 3.3V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 74 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3537 pF @ 20 V
auf Bestellung 150000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 3000+ | 0.43 EUR |
| 6000+ | 0.41 EUR |
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Technische Details DMN4008LFG-13 Diodes Incorporated
Description: MOSFET N-CH 40V 14.4A PWRDI3333, Packaging: Tape & Reel (TR), Package / Case: 8-PowerVDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 14.4A (Ta), Rds On (Max) @ Id, Vgs: 7.5mOhm @ 10A, 10V, Power Dissipation (Max): 1W (Ta), Vgs(th) (Max) @ Id: 3V @ 250µA, Supplier Device Package: PowerDI3333-8, Drive Voltage (Max Rds On, Min Rds On): 3.3V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 40 V, Gate Charge (Qg) (Max) @ Vgs: 74 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 3537 pF @ 20 V.
Weitere Produktangebote DMN4008LFG-13 nach Preis ab 0.44 EUR bis 1.46 EUR
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DMN4008LFG-13 | Hersteller : Diodes Incorporated |
MOSFETs 40V N-Ch Enh FET 20Vgs 19.2A 74nC |
auf Bestellung 2824 Stücke: Lieferzeit 10-14 Tag (e) |
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DMN4008LFG-13 | Hersteller : Diodes Incorporated |
Description: MOSFET N-CH 40V 14.4A PWRDI3333 Packaging: Cut Tape (CT) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 14.4A (Ta) Rds On (Max) @ Id, Vgs: 7.5mOhm @ 10A, 10V Power Dissipation (Max): 1W (Ta) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: PowerDI3333-8 Drive Voltage (Max Rds On, Min Rds On): 3.3V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 74 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3537 pF @ 20 V |
auf Bestellung 151425 Stücke: Lieferzeit 10-14 Tag (e) |
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DMN4008LFG-13 | Hersteller : Diodes Inc |
Trans MOSFET N-CH 40V 14.4A 8-Pin PowerDI EP T/R |
Produkt ist nicht verfügbar |
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| DMN4008LFG-13 | Hersteller : DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 15.4A; Idm: 90A; 2.3W Case: PowerDI3333-8 Kind of package: 13 inch reel; tape Drain-source voltage: 40V Drain current: 15.4A On-state resistance: 20mΩ Type of transistor: N-MOSFET Power dissipation: 2.3W Polarisation: unipolar Gate charge: 74nC Kind of channel: enhancement Gate-source voltage: ±20V Pulsed drain current: 90A Mounting: SMD Anzahl je Verpackung: 3000 Stücke |
Produkt ist nicht verfügbar |
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DMN4008LFG-13 | Hersteller : Diodes Zetex |
Trans MOSFET N-CH 40V 14.4A 8-Pin PowerDI EP T/R |
Produkt ist nicht verfügbar |
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| DMN4008LFG-13 | Hersteller : DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 15.4A; Idm: 90A; 2.3W Case: PowerDI3333-8 Kind of package: 13 inch reel; tape Drain-source voltage: 40V Drain current: 15.4A On-state resistance: 20mΩ Type of transistor: N-MOSFET Power dissipation: 2.3W Polarisation: unipolar Gate charge: 74nC Kind of channel: enhancement Gate-source voltage: ±20V Pulsed drain current: 90A Mounting: SMD |
Produkt ist nicht verfügbar |