
auf Bestellung 10000 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl | Preis |
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10000+ | 0.11 EUR |
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Technische Details DMN4035L-13 Diodes Zetex
Description: MOSFET N-CH 40V 4.6A SOT23, Packaging: Tape & Reel (TR), Package / Case: TO-236-3, SC-59, SOT-23-3, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 4.6A (Ta), Rds On (Max) @ Id, Vgs: 42mOhm @ 4.3A, 10V, Power Dissipation (Max): 720mW, Vgs(th) (Max) @ Id: 3V @ 250µA, Supplier Device Package: SOT-23-3, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 40 V, Gate Charge (Qg) (Max) @ Vgs: 12.5 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 574 pF @ 20 V.
Weitere Produktangebote DMN4035L-13 nach Preis ab 0.15 EUR bis 0.15 EUR
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DMN4035L-13 | Hersteller : Diodes Incorporated |
![]() Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 4.6A (Ta) Rds On (Max) @ Id, Vgs: 42mOhm @ 4.3A, 10V Power Dissipation (Max): 720mW Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: SOT-23-3 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 12.5 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 574 pF @ 20 V |
auf Bestellung 10000 Stücke: Lieferzeit 10-14 Tag (e) |
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DMN4035L-13 | Hersteller : DIODES INCORPORATED |
![]() Description: Transistor: N-MOSFET; unipolar; 40V; 3.7A; Idm: 25A; 1.4W; SOT23 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 40V Drain current: 3.7A Pulsed drain current: 25A Power dissipation: 1.4W Case: SOT23 Gate-source voltage: ±20V On-state resistance: 52mΩ Mounting: SMD Gate charge: 12.5nC Kind of package: 13 inch reel; tape Kind of channel: enhancement Anzahl je Verpackung: 10000 Stücke |
Produkt ist nicht verfügbar |
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DMN4035L-13 | Hersteller : Diodes Incorporated |
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Produkt ist nicht verfügbar |
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DMN4035L-13 | Hersteller : DIODES INCORPORATED |
![]() Description: Transistor: N-MOSFET; unipolar; 40V; 3.7A; Idm: 25A; 1.4W; SOT23 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 40V Drain current: 3.7A Pulsed drain current: 25A Power dissipation: 1.4W Case: SOT23 Gate-source voltage: ±20V On-state resistance: 52mΩ Mounting: SMD Gate charge: 12.5nC Kind of package: 13 inch reel; tape Kind of channel: enhancement |
Produkt ist nicht verfügbar |