Technische Details DMN4036LK3-13 Diodes Zetex
Description: MOSFET N-CH 40V 8.5A TO252-3, Input Capacitance (Ciss) (Max) @ Vds: 453 pF @ 20 V, Gate Charge (Qg) (Max) @ Vgs: 9.2 nC @ 10 V, Drain to Source Voltage (Vdss): 40 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Part Status: Active, Supplier Device Package: TO-252-3, Vgs(th) (Max) @ Id: 3V @ 250µA, Power Dissipation (Max): 2.12W (Ta), Rds On (Max) @ Id, Vgs: 36mOhm @ 12A, 10V, Current - Continuous Drain (Id) @ 25°C: 8.5A (Ta), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Packaging: Tape & Reel (TR).
Weitere Produktangebote DMN4036LK3-13 nach Preis ab 0.32 EUR bis 1.83 EUR
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DMN4036LK3-13 | Diodes Incorporated |
 Description: MOSFET N-CH 40V 8.5A TO252-3Input Capacitance (Ciss) (Max) @ Vds: 453 pF @ 20 V Gate Charge (Qg) (Max) @ Vgs: 9.2 nC @ 10 V Drain to Source Voltage (Vdss): 40 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Part Status: Active Supplier Device Package: TO-252-3 Vgs(th) (Max) @ Id: 3V @ 250µA Power Dissipation (Max): 2.12W (Ta) Rds On (Max) @ Id, Vgs: 36mOhm @ 12A, 10V Current - Continuous Drain (Id) @ 25°C: 8.5A (Ta) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Packaging: Tape & Reel (TR) |
auf Bestellung 45000 Stücke: Lieferzeit 10-14 Tag (e) |
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DMN4036LK3-13 | DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 9.4A; 4.12W; TO252 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 40V Drain current: 9.4A Power dissipation: 4.12W Case: TO252 Gate-source voltage: ±20V On-state resistance: 61mΩ Mounting: SMD Kind of package: 13 inch reel; tape Kind of channel: enhancement |
auf Bestellung 2468 Stücke: Lieferzeit 14-21 Tag (e) |
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DMN4036LK3-13 | Diodes Incorporated |
Description: MOSFET N-CH 40V 8.5A TO252-3 Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 8.5A (Ta) Rds On (Max) @ Id, Vgs: 36mOhm @ 12A, 10V Power Dissipation (Max): 2.12W (Ta) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: TO-252-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 9.2 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 453 pF @ 20 V |
auf Bestellung 46802 Stücke: Lieferzeit 10-14 Tag (e) |
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DMN4036LK3-13 | Diodes Incorporated |
MOSFETs ENHANCE MODE MOSFET 40V N-CHANNEL |
auf Bestellung 199 Stücke: Lieferzeit 10-14 Tag (e) |
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Hersteller: Diodes Incorporated
Description: MOSFET N-CH 40V 8.5A TO252-3
Input Capacitance (Ciss) (Max) @ Vds: 453 pF @ 20 V
Gate Charge (Qg) (Max) @ Vgs: 9.2 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: TO-252-3
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 2.12W (Ta)
Rds On (Max) @ Id, Vgs: 36mOhm @ 12A, 10V
Current - Continuous Drain (Id) @ 25°C: 8.5A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
Description: MOSFET N-CH 40V 8.5A TO252-3
Input Capacitance (Ciss) (Max) @ Vds: 453 pF @ 20 V
Gate Charge (Qg) (Max) @ Vgs: 9.2 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: TO-252-3
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 2.12W (Ta)
Rds On (Max) @ Id, Vgs: 36mOhm @ 12A, 10V
Current - Continuous Drain (Id) @ 25°C: 8.5A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
auf Bestellung 45000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 2500+ | 0.36 EUR |
| 5000+ | 0.33 EUR |
| 7500+ | 0.32 EUR |
| DMN4036LK3-13 |
|
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 9.4A; 4.12W; TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 9.4A
Power dissipation: 4.12W
Case: TO252
Gate-source voltage: ±20V
On-state resistance: 61mΩ
Mounting: SMD
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 9.4A; 4.12W; TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 9.4A
Power dissipation: 4.12W
Case: TO252
Gate-source voltage: ±20V
On-state resistance: 61mΩ
Mounting: SMD
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
auf Bestellung 2468 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 71+ | 1.21 EUR |
| 112+ | 0.76 EUR |
| 175+ | 0.49 EUR |
| 500+ | 0.38 EUR |
| 1000+ | 0.35 EUR |
| DMN4036LK3-13 |
|
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 40V 8.5A TO252-3
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8.5A (Ta)
Rds On (Max) @ Id, Vgs: 36mOhm @ 12A, 10V
Power Dissipation (Max): 2.12W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TO-252-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 9.2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 453 pF @ 20 V
Description: MOSFET N-CH 40V 8.5A TO252-3
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8.5A (Ta)
Rds On (Max) @ Id, Vgs: 36mOhm @ 12A, 10V
Power Dissipation (Max): 2.12W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TO-252-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 9.2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 453 pF @ 20 V
auf Bestellung 46802 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 17+ | 1.24 EUR |
| 26+ | 0.83 EUR |
| 100+ | 0.56 EUR |
| 500+ | 0.44 EUR |
| 1000+ | 0.4 EUR |
| DMN4036LK3-13 |
|
Hersteller: Diodes Incorporated
MOSFETs ENHANCE MODE MOSFET 40V N-CHANNEL
MOSFETs ENHANCE MODE MOSFET 40V N-CHANNEL
auf Bestellung 199 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 2+ | 1.83 EUR |
| 10+ | 1.14 EUR |
| 100+ | 0.75 EUR |
| 500+ | 0.57 EUR |
| 1000+ | 0.52 EUR |
| 2500+ | 0.45 EUR |
| 5000+ | 0.4 EUR |