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DMN4040SK3-13

DMN4040SK3-13 Diodes Incorporated


Hersteller: Diodes Incorporated
Description: MOSFET N-CH 40V 6A TO252-3
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Ta)
Rds On (Max) @ Id, Vgs: 30mOhm @ 12A, 10V
Power Dissipation (Max): 1.71W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TO-252-3
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 18.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 945 pF @ 20 V
auf Bestellung 107500 Stücke:

Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
2500+0.27 EUR
5000+ 0.26 EUR
12500+ 0.24 EUR
25000+ 0.23 EUR
Mindestbestellmenge: 2500
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Technische Details DMN4040SK3-13 Diodes Incorporated

Description: MOSFET N-CH 40V 6A TO252-3, Packaging: Tape & Reel (TR), Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 6A (Ta), Rds On (Max) @ Id, Vgs: 30mOhm @ 12A, 10V, Power Dissipation (Max): 1.71W (Ta), Vgs(th) (Max) @ Id: 3V @ 250µA, Supplier Device Package: TO-252-3, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 40 V, Gate Charge (Qg) (Max) @ Vgs: 18.6 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 945 pF @ 20 V.

Weitere Produktangebote DMN4040SK3-13 nach Preis ab 0.24 EUR bis 0.81 EUR

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit
Preis ohne MwSt
DMN4040SK3-13 DMN4040SK3-13 Hersteller : Diodes Incorporated DIODS13197_1-2541721.pdf MOSFET 40V N-Ch Enh Mode 30mOhm 10V 13.8A
auf Bestellung 18421 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
4+0.8 EUR
10+ 0.65 EUR
100+ 0.44 EUR
500+ 0.35 EUR
1000+ 0.25 EUR
2500+ 0.24 EUR
Mindestbestellmenge: 4
DMN4040SK3-13 DMN4040SK3-13 Hersteller : Diodes Incorporated Description: MOSFET N-CH 40V 6A TO252-3
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Ta)
Rds On (Max) @ Id, Vgs: 30mOhm @ 12A, 10V
Power Dissipation (Max): 1.71W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TO-252-3
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 18.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 945 pF @ 20 V
auf Bestellung 109392 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
22+0.81 EUR
26+ 0.68 EUR
100+ 0.48 EUR
500+ 0.37 EUR
1000+ 0.3 EUR
Mindestbestellmenge: 22
DMN4040SK3-13 DMN4040SK3-13 Hersteller : Diodes Zetex dmn4040sk3.pdf Trans MOSFET N-CH 40V 9.3A 3-Pin(2+Tab) DPAK T/R
auf Bestellung 65 Stücke:
Lieferzeit 14-21 Tag (e)
DMN4040SK3-13 DMN4040SK3-13 Hersteller : Diodes Zetex dmn4040sk3.pdf Trans MOSFET N-CH 40V 9.3A 3-Pin(2+Tab) DPAK T/R
auf Bestellung 65 Stücke:
Lieferzeit 14-21 Tag (e)
DMN4040SK3-13 DMN4040SK3-13 Hersteller : Diodes Inc dmn4040sk3.pdf Trans MOSFET N-CH 40V 9.3A 3-Pin(2+Tab) DPAK T/R
Produkt ist nicht verfügbar
DMN4040SK3-13 Hersteller : DIODES INCORPORATED Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 11A; Idm: 50A; 8.9W; TO252
Mounting: SMD
Case: TO252
Kind of package: reel; tape
Pulsed drain current: 50A
Power dissipation: 8.9W
Gate charge: 18.6nC
Polarisation: unipolar
Drain current: 11A
Kind of channel: enhanced
Drain-source voltage: 40V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
On-state resistance: 54mΩ
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
DMN4040SK3-13 DMN4040SK3-13 Hersteller : Diodes Zetex dmn4040sk3.pdf Trans MOSFET N-CH 40V 9.3A 3-Pin(2+Tab) DPAK T/R
Produkt ist nicht verfügbar
DMN4040SK3-13 Hersteller : DIODES INCORPORATED Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 11A; Idm: 50A; 8.9W; TO252
Mounting: SMD
Case: TO252
Kind of package: reel; tape
Pulsed drain current: 50A
Power dissipation: 8.9W
Gate charge: 18.6nC
Polarisation: unipolar
Drain current: 11A
Kind of channel: enhanced
Drain-source voltage: 40V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
On-state resistance: 54mΩ
Produkt ist nicht verfügbar