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| Anzahl | Preis |
|---|---|
| 5+ | 1.79 EUR |
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Technische Details DMN5L06-7 DIODES, INC.
Description: MOSFET N-CH 50V 280MA SOT23-3, Input Capacitance (Ciss) (Max) @ Vds: 50 pF @ 25 V, Drain to Source Voltage (Vdss): 50 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 1.8V, 2.7V, Supplier Device Package: SOT-23-3, Vgs(th) (Max) @ Id: 1.2V @ 250µA, Power Dissipation (Max): 350mW (Ta), Rds On (Max) @ Id, Vgs: 3Ohm @ 200mA, 2.7V, Current - Continuous Drain (Id) @ 25°C: 280mA (Ta), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: TO-236-3, SC-59, SOT-23-3, Packaging: Tape & Reel (TR).
Weitere Produktangebote DMN5L06-7
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis |
|---|---|---|---|---|---|
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DMN5L06-7 | Diodes Incorporated |
 Description: MOSFET N-CH 50V 280MA SOT23-3Input Capacitance (Ciss) (Max) @ Vds: 50 pF @ 25 V Drain to Source Voltage (Vdss): 50 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 1.8V, 2.7V Supplier Device Package: SOT-23-3 Vgs(th) (Max) @ Id: 1.2V @ 250µA Power Dissipation (Max): 350mW (Ta) Rds On (Max) @ Id, Vgs: 3Ohm @ 200mA, 2.7V Current - Continuous Drain (Id) @ 25°C: 280mA (Ta) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Packaging: Tape & Reel (TR) |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
|
|
DMN5L06-7 | Diodes Incorporated |
Description: MOSFET N-CH 50V 280MA SOT23-3 Input Capacitance (Ciss) (Max) @ Vds: 50 pF @ 25 V Drain to Source Voltage (Vdss): 50 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 1.8V, 2.7V Supplier Device Package: SOT-23-3 Vgs(th) (Max) @ Id: 1.2V @ 250µA Power Dissipation (Max): 350mW (Ta) Rds On (Max) @ Id, Vgs: 3Ohm @ 200mA, 2.7V Current - Continuous Drain (Id) @ 25°C: 280mA (Ta) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Packaging: Cut Tape (CT) |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| DMN5L06-7 |
|
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 50V 280MA SOT23-3
Input Capacitance (Ciss) (Max) @ Vds: 50 pF @ 25 V
Drain to Source Voltage (Vdss): 50 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 2.7V
Supplier Device Package: SOT-23-3
Vgs(th) (Max) @ Id: 1.2V @ 250µA
Power Dissipation (Max): 350mW (Ta)
Rds On (Max) @ Id, Vgs: 3Ohm @ 200mA, 2.7V
Current - Continuous Drain (Id) @ 25°C: 280mA (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
Description: MOSFET N-CH 50V 280MA SOT23-3
Input Capacitance (Ciss) (Max) @ Vds: 50 pF @ 25 V
Drain to Source Voltage (Vdss): 50 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 2.7V
Supplier Device Package: SOT-23-3
Vgs(th) (Max) @ Id: 1.2V @ 250µA
Power Dissipation (Max): 350mW (Ta)
Rds On (Max) @ Id, Vgs: 3Ohm @ 200mA, 2.7V
Current - Continuous Drain (Id) @ 25°C: 280mA (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| DMN5L06-7 |
|
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 50V 280MA SOT23-3
Input Capacitance (Ciss) (Max) @ Vds: 50 pF @ 25 V
Drain to Source Voltage (Vdss): 50 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 2.7V
Supplier Device Package: SOT-23-3
Vgs(th) (Max) @ Id: 1.2V @ 250µA
Power Dissipation (Max): 350mW (Ta)
Rds On (Max) @ Id, Vgs: 3Ohm @ 200mA, 2.7V
Current - Continuous Drain (Id) @ 25°C: 280mA (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Cut Tape (CT)
Description: MOSFET N-CH 50V 280MA SOT23-3
Input Capacitance (Ciss) (Max) @ Vds: 50 pF @ 25 V
Drain to Source Voltage (Vdss): 50 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 2.7V
Supplier Device Package: SOT-23-3
Vgs(th) (Max) @ Id: 1.2V @ 250µA
Power Dissipation (Max): 350mW (Ta)
Rds On (Max) @ Id, Vgs: 3Ohm @ 200mA, 2.7V
Current - Continuous Drain (Id) @ 25°C: 280mA (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Cut Tape (CT)
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH