auf Bestellung 69000 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 3000+ | 0.19 EUR |
| 9000+ | 0.17 EUR |
Produktrezensionen
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Technische Details DMN5L06DWK-7 Diodes Zetex
Description: MOSFET 2N-CH 50V 0.305A SOT363, Packaging: Tape & Reel (TR), Package / Case: 6-TSSOP, SC-88, SOT-363, Mounting Type: Surface Mount, Configuration: 2 N-Channel (Dual), Operating Temperature: -65°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 250mW, Drain to Source Voltage (Vdss): 50V, Current - Continuous Drain (Id) @ 25°C: 305mA, Input Capacitance (Ciss) (Max) @ Vds: 50pF @ 25V, Rds On (Max) @ Id, Vgs: 2Ohm @ 50mA, 5V, FET Feature: Logic Level Gate, Vgs(th) (Max) @ Id: 1V @ 250µA, Supplier Device Package: SOT-363.
Weitere Produktangebote DMN5L06DWK-7 nach Preis ab 0.18 EUR bis 0.2 EUR
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DMN5L06DWK-7 | Hersteller : Diodes Zetex |
 Trans MOSFET N-CH 50V 0.305A 6-Pin SOT-363 T/R |
auf Bestellung 69000 Stücke: Lieferzeit 14-21 Tag (e) |
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DMN5L06DWK-7 | Hersteller : Diodes Incorporated |
MOSFET Dual N-Channel |
auf Bestellung 32269 Stücke: Lieferzeit 10-14 Tag (e) |
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DMN5L06DWK-7 | Hersteller : Diodes Inc |
Trans MOSFET N-CH 50V 0.305A 6-Pin SOT-363 T/R |
auf Bestellung 69000 Stücke: Lieferzeit 14-21 Tag (e) |
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DMN5L06DWK-7 | Hersteller : DIODES INCORPORATED |
Category: Multi channel transistors Description: Transistor: N-MOSFET x2; unipolar; 50V; 0.305A; Idm: 0.8A; 0.25W Type of transistor: N-MOSFET x2 Polarisation: unipolar Drain-source voltage: 50V Drain current: 0.305A Pulsed drain current: 0.8A Power dissipation: 0.25W Case: SOT363 Gate-source voltage: ±20V On-state resistance: 2Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhanced Features of semiconductor devices: ESD protected gate Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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DMN5L06DWK-7 | Hersteller : Diodes Incorporated |
Description: MOSFET 2N-CH 50V 0.305A SOT363 Packaging: Tape & Reel (TR) Package / Case: 6-TSSOP, SC-88, SOT-363 Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -65°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 250mW Drain to Source Voltage (Vdss): 50V Current - Continuous Drain (Id) @ 25°C: 305mA Input Capacitance (Ciss) (Max) @ Vds: 50pF @ 25V Rds On (Max) @ Id, Vgs: 2Ohm @ 50mA, 5V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: SOT-363 |
Produkt ist nicht verfügbar |
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DMN5L06DWK-7 | Hersteller : Diodes Incorporated |
Description: MOSFET 2N-CH 50V 0.305A SOT363 Packaging: Cut Tape (CT) Package / Case: 6-TSSOP, SC-88, SOT-363 Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -65°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 250mW Drain to Source Voltage (Vdss): 50V Current - Continuous Drain (Id) @ 25°C: 305mA Input Capacitance (Ciss) (Max) @ Vds: 50pF @ 25V Rds On (Max) @ Id, Vgs: 2Ohm @ 50mA, 5V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: SOT-363 |
Produkt ist nicht verfügbar |
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DMN5L06DWK-7 | Hersteller : DIODES INCORPORATED |
Category: Multi channel transistors Description: Transistor: N-MOSFET x2; unipolar; 50V; 0.305A; Idm: 0.8A; 0.25W Type of transistor: N-MOSFET x2 Polarisation: unipolar Drain-source voltage: 50V Drain current: 0.305A Pulsed drain current: 0.8A Power dissipation: 0.25W Case: SOT363 Gate-source voltage: ±20V On-state resistance: 2Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhanced Features of semiconductor devices: ESD protected gate |
Produkt ist nicht verfügbar |